Silylation and Dry Development of Chemically Amplified Resists SAL601*, AZPN114*1, and Epoxidised Resist (EPR*1) for High Resolution Electron-Beam Lithography

Tegou, E.; Gogolides, Εvangelos; Argitis, Panagiotis; Raptis, Ioannis; Meneghini, G.; Cui, Zheng

doi:10.1143/jjap.37.6873

Cited by 6 publications

(6 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Most materials of resist used in semiconductor process technology are made of polymaterials, although many kinds of materials, such as metals, oxides, and C 60 , are used as mask materials in dry etching processes. [1][2][3][4][5][6][7][8][9][10][11] Polymaterials with sensitivity to UV light and electron beam (EB) are used in photolithography and EB lithography processes, respectively. However, the phototonus of mask materials is not necessarily available in the techniques such as the lift-off process and thermal nanoimprint lithography (TNIL) process.…”

Section: Introductionmentioning

confidence: 99%

Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material

Matsutani

Takada

2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We demonstrated that bacterial cells can be used as a mask material for microfabrication of GaAs and Si by a Cl2 inductively coupled plasma (ICP) etching process. The etching rate of Escherichia coli cells was similar to that of electron beam resist or nanoimprint resist. We also demonstrated the degradation of bacterial cells by low-pressure plasma treatment using O2, Ar, air, and H2O for removal of bacterial cells as the etching mask material. Bacterial cells were efficiently degraded by ions in the low-pressure discharge plasma. The proposed process using bacterial cells can be expected to be applied to semiconductor dry etching processes.

show abstract

Section: Introductionmentioning

confidence: 99%

Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material

Matsutani

Takada

2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…This was because antimony oxides are nonvolatile, and thus, antimony-related residues (of the type known as grass) are observed upon resin etching in oxygen plasma. 17 Both materials were dissolved in propylene glycol methyl ether acetate (PGMEA) at concentrations chosen to lead to a desired film thickness. The maximum film thickness achievable with SU8 is about 2 mm, whereas the maximum aspect ratio is in excess of 50 for 365-nm lithography.…”

Section: Methodsmentioning

confidence: 99%

“…The standard silylation process 17,22 consisted of the following steps ( Fig. 2 obtained with a filter) through a mask (proximity printing) with doses falling into the optimum range for a negative-tone process with wet development.…”

Section: Silylation Process and Dry Developmentmentioning

confidence: 99%

“…14 In this study, we examined a positive-tone silylation process for a chemically amplified epoxidized resist. In line with our earlier experience, [15][16][17][18] we chose a liquid-phase silylation over the gas-phase version. However, if desirable, our findings can be adapted, at least in principle, to gas-phase silylation processes as well (e.g., refs.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications

Kontziampasis

Beltsios

Tegou³

et al. 2010

J of Applied Polymer Sci

View full text Add to dashboard Cite

We explored the selective wet silylation of noncrosslinked areas of epoxidized photoresists using chlorosilanes. Emphasis was placed on the Si uptake of the epoxy films when controlled low levels of water were incorporated into the silylation solution. Fourier transform infrared measurements and oxygen-plasma resistance data with in situ laser interferometry and multiwavelength ellipsometry are presented. The fine tuning of the moisture level was found to be crucial for the generation of satisfactory and reproducible structures. The optimized version of the process was shown to be useful for epoxy-based dry micromachining. Overall, an attractive positive-tone process is presented as an alternative to the usual negativetone process for commercial epoxy resists.

show abstract

“…It is applied effectively to 193 nm lithography and in high energy (50 KeV) e-beam lithography. Secondly, the process is compared to silylation processes developed for hydroxyl functionalized commercial a-beam resists (SAL601 * and AZPN114*) [9]. Finally, a silylation process developed for an experimental 157 nm Chemically Amplified Positive tone resist, (namely CAP resist) is presented.…”

Section: Introductionmentioning

confidence: 99%

Surface Silylation: Chemistry and Process Issues.

Tegou¹

2001

J. Photopol. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Three different silylation chemistries and processes are presented. The highly sensitive epoxy resist (EPR) can be silylated with chlorosilanes while the hydroxyl functionalized SALb01 and AZPN114 are silylated with the standard silyl amine chemistry (positive tone, single layer, top surface imaging (TSI), liquid or gas phase silylation processes). The process developed for epoxy functionalized resists is applied effectively to 193 nm and high energy (50 KeV) electron-beam lithography. Process issues are discussed. In addition, a novel bilayer silylation process for an experimental 157 nm chemically amplified positive (CAP) resist is presented in which the silylation reaction takes place after the wet development following the standard silyl amine chemistry. Alternatively, the acrylate moieties can be silylated with diamino siloxanes in alcoholic solutions.

show abstract

Silylation and Dry Development of Chemically Amplified Resists SAL601^, AZPN114^1, and Epoxidised Resist (EPR^*1) for High Resolution Electron-Beam Lithography

Abstract: The elastic compliances of PbFz have been determined using the composite oscillator technique on a set of five single-crystal specimens. The values obtained are s11= 1.534, -slz=0.49 and s44=4.756 (10-l2 cm2 dyn-l).

Cited by 6 publications

References 16 publications

Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material

Microfabrication of Si and GaAs by Plasma Etching Process Using Bacterial Cells as an Etching Mask Material

Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications

Surface Silylation: Chemistry and Process Issues.

Contact Info

Product

Resources

About