2015
DOI: 10.1007/s10854-015-2736-6
|View full text |Cite
|
Sign up to set email alerts
|

Electromigration-induced intermetallic growth and voids formation in symmetrical Cu/Sn/Cu and Cu/Intermetallic compounds (IMCs)/Cu joints

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
10
0
4

Year Published

2015
2015
2019
2019

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 29 publications
(15 citation statements)
references
References 46 publications
1
10
0
4
Order By: Relevance
“…As Sn and Ni are sufficient, the growth of Cu-Ni-Sn IMCs is mainly controlled by Cu concentration. Generally, there are two driving force for Cu atoms flux under current stressing: 1) chemical potential, as Cu concentration varies in different areas; 2) electric force [11]. The atomic flux due to the chemical potential, J CP is described by the following equation [2]:…”
Section: Resultsmentioning
confidence: 99%
“…As Sn and Ni are sufficient, the growth of Cu-Ni-Sn IMCs is mainly controlled by Cu concentration. Generally, there are two driving force for Cu atoms flux under current stressing: 1) chemical potential, as Cu concentration varies in different areas; 2) electric force [11]. The atomic flux due to the chemical potential, J CP is described by the following equation [2]:…”
Section: Resultsmentioning
confidence: 99%
“…Consequently, appropriate content of TiC nanoparticles effectively inhibited the growth of Cu6Sn5 and Cu3Sn layers during aging, as shown in Figure 6 [47]. The increasing current density in IC brings a deteriorative electromigration effect and the improvement of EM resistance of solder joints gradually becomes a research focus in reliability research [48,49]. CNTs will entangle with each other after adding it in the strengthening phase in lead-free solder.…”
Section: Reliabilitymentioning
confidence: 99%
“…Проблема пороутворення є особливо актуальною для надійності люттєвих з'єднань у мікроелектроніці [1][2][3][4][5]. Ріст інтерметалічних сполук між припоєм та металічним контактом інтегральної мікросхеми супроводжується появою пор, які спричиняють розрив електричного кола і призводять до відмов приладів електроніки.…”
Section: вступunclassified