Electromigration in submicron interconnect features of integrated circuits

Ceric, H.; Selberherr, S.

doi:10.1016/j.mser.2010.09.001

Cited by 75 publications

(43 citation statements)

References 89 publications

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“…The copper interconnect is known to have microstructure, which is dependent on various factors including copper deposition conditions, thermal processing conditions, seed layer deposition techniques and thickness, seed layer treatment, liner/barrier material types and deposition techniques, and layout geometry (Ceric and Selberherr 2011). Experimental data have shown reliability lifetimes of copper interconnects to be dependent on microstructure, texture distribution, and grain size distribution (KIM 2006;Ryu et al 1999;Choi et al 2007;Choi et al 2008).…”

Section: Methodsmentioning

confidence: 99%

Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects

Basavalingappa

Shen

Lloyd

2017

Mech Adv Mater Mod Process

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Background: Copper is the primary metal used in integrated circuit manufacturing of today. Even though copper is face centered cubic it has significant mechanical anisotropy depending on the crystallographic orientations. Copper metal lines in integrated circuits are polycrystalline and typically have lognormal grain size distribution. The polycrystalline microstructure is known to impact the reliability and must be considered in modeling for better understanding of the failure mechanisms. Methods: In this work, we used Voronoi tessellation to model the polycrystalline microstructure with lognormal grainsize distribution for the copper metal lines in test structures. Each of the grains is then assigned an orientation with distinct probabilistic texture and corresponding anisotropic elastic constants based on the assigned orientation. The test structure is then subjected to a thermal stress.

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Section: Methodsmentioning

confidence: 99%

Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects

Basavalingappa

Shen

Lloyd

2017

Mech Adv Mater Mod Process

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“…More comprehensive review on electro-migration issues at submicron level interconnects are found in ref. [22,23].…”

Section: Limit Of Conventional Copper Interconnect Materialsmentioning

confidence: 99%

Graphene Nanoribbons (GNRs) for Future Interconnect

Duryat

2016

IOP Conf. Ser.: Mater. Sci. Eng.

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Section: Introductionmentioning

confidence: 99%

“…In particular, impact of electromigration (EM) increased [1][2][3][4]. EM is the mass transport in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms [1]. This effect damages interconnect because amounts of matter leaving and entering a given volume of interconnect are not equal, leading to accumulation or loss of material which results in damage [1].…”

Section: Introductionmentioning

confidence: 99%

“…EM is the mass transport in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms [1]. This effect damages interconnect because amounts of matter leaving and entering a given volume of interconnect are not equal, leading to accumulation or loss of material which results in damage [1]. When atomic flux into a region is greater than the flux leaving it, the matter accumulates in the form of a hillock.…”

Section: Introductionmentioning

confidence: 99%

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Pattern-Based Approach to Current Density Verification

Melikyan¹,

Babayan²,

Harutyunyan³

2012

ELS

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Abstract-Methodology of static verification of current density based on layout patterns common in IC designs is proposed. The methodology is based on pre-calculation of current density distribution for common layout patterns. Then using the obtained data to calculate current densities of large circuits by partitioning them to selected patterns. Presented experimental results show the effectiveness of the approach.

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Electromigration in submicron interconnect features of integrated circuits

Cited by 75 publications

References 89 publications

Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects

Modeling the copper microstructure and elastic anisotropy and studying its impact on reliability in nanoscale interconnects

Graphene Nanoribbons (GNRs) for Future Interconnect

Pattern-Based Approach to Current Density Verification

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