Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode

Gelloz, Bernard; Koshida, Nobuyoshi

doi:10.1063/1.1290458

Cited by 164 publications

(115 citation statements)

References 16 publications

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“…The low matrix defect density has allowed us to obtain a power efficiency of 1.2ϫ 10 −3 % for the best result, corresponding to an external quantum efficiency of 0.03%. In general, authors only report external quantum efficiency, which is the upper limit for power efficiency, 25 but power efficiency values are the one required for application purposes. To our knowledge, the value of power efficiency we report is the highest reported in Si-ncl sensitized Er ion systems.…”

Section: B Conduction and El Propertiesmentioning

confidence: 99%

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Jambois

Berencén

Hijazi

et al. 2009

Journal of Applied Physics

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We have studied the current transport and electroluminescence properties of metal oxide semiconductor ͑MOS͒ devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10 −3 %.

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Section: B Conduction and El Propertiesmentioning

confidence: 99%

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Jambois

Berencén

Hijazi

et al. 2009

Journal of Applied Physics

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“…This work has been focused on the building blocks of photonic communication systems such as lasers [5][6][7][8], modulators, photodetectors, and others [9][10][11][12][13][14][15]. Our work has been focused on developing a hybrid integration platform that allows for III-V material functionality, such as light amplification and detection, to be utilized on silicon waveguide based devices.…”

Section: Introductionmentioning

confidence: 99%

Integrated AlGaInAs-silicon evanescent race track laser and photodetector

Fang¹,

Jones²,

Park³

et al. 2007

Opt. Express

187

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Recently, AlGaInAs-silicon evanescent lasers have been demonstrated as a method of integrating active photonic devices on a silicon based platform. This hybrid waveguide architecture consists of III-V quantum wells bonded to silicon waveguides. The self aligned optical mode leads to a bonding process that is manufacturable in high volumes. Here give an overview of a racetrack resonator laser integrated with two photo-detectors on the hybrid AlGaInAs-silicon evanescent device platform. Unlike previous demonstrations of hybrid AlGaInAs-silicon evanescent lasers, we demonstrate an on-chip racetrack resonator laser that does not rely on facet polishing and dicing in order to define the laser cavity. The laser runs continuous-wave (c.w.) at 1590 nm with a threshold of 175 mA, has a maximum total output power of 29 mW and a maximum operating temperature of 60 C. The output of this laser light is directly coupled into a pair of on chip hybrid AlGaInAs-silicon evanescent photodetectors used to measure the laser output.Keywords: Silicon evanescent laser, Silicon photonics, integration, photodetector, semiconductor laser IntroductionSilicon photonics has received a lot of attention by researchers with the hopes to leverage the low cost manufacturing infrastructure of CMOS photonics for applications such as chip to chip and board to board interconnects [1][2][3][4]. This work has been focused on the building blocks of photonic communication systems such as lasers [5][6][7][8], modulators, photodetectors, and others [9][10][11][12][13][14][15]. Our work has been focused on developing a hybrid integration platform that allows for III-V material functionality, such as light amplification and detection, to be utilized on silicon waveguide based devices. This platform consists of a III-V epitaxial structure bonded to a silicon waveguide to make a hybrid waveguide such that its optical mode lies primarily in the silicon region with a small portion of the mode overlapping the quantum wells of the III-V structure for optical gain. The optical mode characteristics are predominately defined by the silicon waveguide processing. Bonding can be performed without critical alignment. The remaining critical alignment steps, such as the definition of electrical current injection channels, utilize standard lithographic techniques leading to a high volume, low cost, solution for active devices on silicon. The first hybrid laser demonstration relied on the dicing and polishing of straight hybrid waveguides to define a Fabry-Perot laser cavity [16]. Here we review a monolithic hybrid AlGaInAs silicon evanescent laser based on a racetrack-resonator-topography. The laser runs continuous-wave (c.w.) with a threshold of 175 mA, a maximum total output power of 29 mW and maximum operating temperature of 60 oC. Moreover we report the integration of this laser with a hybrid AlGaInAs-silicon evanescent photodetector used to measure the laser output [17].

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“…During that time silicon technology has significantly improved and correspondently the quantum efficiency of silicon LEDs was raised from 10 6 to several percents [2][3][4]. One of the milestones on this way was the evidence of visible light emission from avalanche porous silicon (PS) reverse biased diodes [5].…”

Section: Introductionmentioning

confidence: 99%

Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

et al. 2007

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The use of silicon based light emitting diodes may completely solve the problem of low compatibility of optoelectronics elements and silicon chip. At present time the most suitable kinds of Si-LEDs are monocrystal and porous silicon avalanche LEDs. They have advantages such as long operation lifetime (> 10000 hours), continuous spectrum, which allows to filter RGB colors, operation voltages (< 12 V), extremely sharp voltage-current characteristic, nanosecond response time, and high high operation current densities (up to 8000 A/cm 2 in pulse mode). Rather low energy efficiency (< 1%) is not so significant for near to eyes (NTE) microdisplays. These advantages open a way to design a high performance and cost effective passive addressed microdisplays.

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Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode

Cited by 164 publications

References 16 publications

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Integrated AlGaInAs-silicon evanescent race track laser and photodetector

Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

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