Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

Jaguiro, P.; Katsuba, P. S.; Lazarouk, S. K.; Smirnov, A.

doi:10.12693/aphyspola.112.1031

Cited by 19 publications

(17 citation statements)

References 15 publications

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“…It was noted very early on that very faint light is emitted from low-voltage field emission diodes compared to avalanche diodes, almost a factor 100 smaller in intensity [3]. It was also reported recently that tunneling currents do not produce hot carriers and the resultant light emission, and can be viewed as a parasitic current, which decreases the internal quantum efficiency of silicon light emitting devices [12].…”

Section: Introductionmentioning

confidence: 97%

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

Plessis

Rademeyer²

2010

Solid-State Electronics

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a b s t r a c tIn this paper a novel technique to analyze the low-voltage breakdown regime of silicon diodes is presented. It is shown that the field emission tunnel current component of the reverse current does not cause energy transitions of carriers, and therefore will not emit photons. All photons being emitted from the pn junction are due to avalanche electroluminescence as a result of hot carrier energy relaxation processes. Measuring the light intensity output as a function of reverse current, the two current components (field emission and impact ionization) can be extracted as a function of reverse voltage. The experimental results were verified using the differential dynamic impedance method, as well as fitting a theoretical model to the extracted tunnel current. The temperature coefficient of current also indicated the transition from tunneling to avalanche.

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Section: Introductionmentioning

confidence: 97%

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

Plessis

Rademeyer²

2010

Solid-State Electronics

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“…Porous silicon avalanching electroluminescent devices were viewed as quite promising for microdisplay applications, especially since the internal quantum efficiencies achieved were relatively high. 3,4 However, porous silicon is a very reactive material and the long term stability of porous silicon microdisplays is problematic, 5 leading to reliability issues and short lifetimes. The porous silicon technology is also not fully compatible with the mature complementary metaloxide semiconductor (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

An <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">8</mn><mo mathvariant="bold">×</mo><mn mathvariant="bold">64</mn></mrow></math></inline-formula> pixel dot matrix microdisplay in 0.35-μm complementary metal-oxide semiconductor technology

Venter

2012

Opt. Eng

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Abstract. Microdisplay technologies for near-to-eye applications mostly use a complementary metal-oxide semiconductor (CMOS) processing chip as backplane for pixel addressing, with extensive post-processing on top of the CMOS chip to deposit organic LED or liquid crystal layers. Here, we examine the possibility of integrating emissive microdisplays within the CMOS chip, with absolutely no post processing needed. This will dramatically reduce the manufacturing cost of microdisplays and may lead to new microdisplay applications. Visible electroluminescence is achieved by biasing pn junctions into avalanche breakdown mode. The most appropriate CMOS pn junction is selected and innovative techniques are applied to increase the light extraction efficiency from the CMOS chip using the metal layers of the CMOS process. An 8 × 64 dot matrix microdisplay was designed and manufactured in a 0.35-μm CMOS technology. The experimental results show that a luminance level of 20 cd∕m 2 can be reached, which is an adequate luminance value in order to comfortably read data being displayed in relatively dark environments. The electrical power dissipation per pixel being activated is 0.9 mW∕pixel. It is also shown that the pixels can be switched at a rate faster than 350 MHz.

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“…Avalanche electroluminescence has first been published in 1955 1 , with the emission spectrum extending over a relatively broad band, almost completely covering the visible part of the spectrum. Naturally, this allows light emitters based on these principles to be used as displays, observable by the human eye [2][3] . This work revolves around the realization of a microdisplay manufactured in a standard, unaltered CMOS technology geared towards VLSI.…”

Section: Introductionmentioning

confidence: 99%

CMOS dot matrix microdisplay

Venter

Bogalecki²,

Plessis

et al. 2011

SPIE Proceedings

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Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

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Porous Silicon Avalanche LEDs and their Applications in Optoelectronics and Information Displays

Cited by 19 publications

References 15 publications

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

Novel electroluminescence technique to analyze mixed reverse breakdown phenomena in silicon diodes

An <inline-formula><math display="inline" overflow="scroll"><mrow><mn mathvariant="bold">8</mn><mo mathvariant="bold">×</mo><mn mathvariant="bold">64</mn></mrow></math></inline-formula> pixel dot matrix microdisplay in 0.35-μm complementary metal-oxide semiconductor technology

CMOS dot matrix microdisplay

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