Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Jambois, O.; Berencén, Yonder; Hijazi, Khalil; Wojdak, M.; Kenyon, Anthony J.; Gourbilleau, Fabrice; Rizk, R.; Garrido, B.

doi:10.1063/1.3213386

Cited by 55 publications

(43 citation statements)

References 24 publications

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“…We find that all fabricated devices are well described by a PF conduction mechanism, similar to an earlier study on similar samples [22]. The dynamic permittivity ε r , used here as a free fit parameter, is shown to be ε r = 3.0 ± 0.2 for all layers, indicating that there is no significant change in the composition when the thickness is increased.…”

Section: Device Processing and Electrical Characteristicssupporting

confidence: 63%

“…Numerous excellent works on SiO x :Er exist in the literature, but they are, in most cases, based on photoluminescence results [15][16][17][18][19][20]. The few reports of electroluminescence from SiO x :Er demonstrate that Si excess in SiO 2 is absolutely needed to i) enhance the electrical conduction and injection of carriers and ii) allow efficient excitation of Er 3+ ions [21,22]. Recent promising results were obtained under alternative current excitation scheme [23,24].…”

Section: Introductionmentioning

confidence: 99%

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Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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Abstract:We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiO x ) layers. The effects of both the active layer thickness and the Siexcess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electricallydriven devices using Si-ncs or Si-excess mediated EL. USSR 5, 685-687 (1938). ©2012 Optical Society of America

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Section: Device Processing and Electrical Characteristicssupporting

confidence: 63%

Section: Introductionmentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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“…For the particular type of device presented here we also use the term MNOSLED to enhance the fact that we have introduce a bi-layer (or tri-layer) in a similar way as for the MNOS memories [15]. The electrodes used in previous designs include semitransparent metals, thin polysilicon and indium tin oxide (ITO) [16,17]. The electrode preferred in current devices is a thin (100 nm), semitransparent n-type (phosphorous) heavily-doped polysilicon.…”

Section: Methodsmentioning

confidence: 99%

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Berencén¹,

Carreras²,

Jambois³

et al. 2011

Opt. Express

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Abstract:The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi-and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. Garrido, "Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitrideoxide gate stacks," Appl.

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“…17,18 Erbium implantation produces deep energy trapping levels which change the transport properties of the Si-NC LED. 11,19 This is supported by the DC I-V and C-V characteristics shown in Fig.…”

Section: A Direct Current Excitationmentioning

confidence: 99%

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

Anopchenko

Tengattini

Marconi

et al. 2012

Journal of Applied Physics

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High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate. V C 2012 American Institute of Physics. [http://dx

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Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions

Cited by 55 publications

References 24 publications

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

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