Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

Abstract

Abstract:The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi-and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to lowcost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options. Garrido, "Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitrideoxide gate stacks," Appl.

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

“…Silicon based light sources have been widely investigated for their implementation in integrated photonic circuits [1][2][3][4][5][6][7][8].…”

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

“…10 Also, we have recently demonstrated the suitability of SiN x , in combination with SiO 2 tunnel layers, as promising candidate for the silicon-solid state lighting. 11 Thus, an encouraging scenario toward RE-doped SiN x LEDs is envisaged. We are only aware of Er-doped SiN x electroluminescent devices, where the potentiality of this material for the engineering of light emitters at 1.5 lm was reported.…”

Correlation between charge transport and electroluminescence properties of Si-rich oxide/nitride/oxide-based light emitting capacitors

“…[1][2][3][4][5][6][7][8][9][10] Silicon-rich silicon nitride (SRSN) and silicon-rich silicon oxide (SRSO) materials have mostly been considered due to their good emission properties (under optical and electrical excitation) and compatibility with the mainstream complementary metal oxide semiconductor (CMOS) technology. [1][2][3][4][5][6][7][8] Much effort has been dedicated to improve the electroluminescence (EL) intensity as well as the efficiency of the light-emitting devices.…”

“…[1][2][3][4] Published works span from those centering the attention on the material optimization in terms of the different fabrication processes, 6,7 to those that mostly focus on the electrical and EL properties. [8][9][10] Efficient light-emitting devices have already been demonstrated using either SRSN or SRSO films. 2,4 In former papers, we have reported the development of metal-nitride-oxide-semiconductor light-emitting devices that we called MNOSLEDs.…”

“…2,4 In former papers, we have reported the development of metal-nitride-oxide-semiconductor light-emitting devices that we called MNOSLEDs. 9,10 A typical structure of metaloxide-semiconductor field effect transistor (MOSFET), where the gate oxide was substituted by an oxide/nitride (ON, bi-layer) or oxide/nitride/oxide (ONO, tri-layer) gate stack was used. The photometric analysis conducted in these layers represented a proof of concept for the development of silicon-based solid state lighting.…”