Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Abstract

a b s t r a c tWe present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er 3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 • C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er 3+ ions have been extracted.

Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip

“….). The EL spectroscopy of the upper levels of Er 3+ (up to 2.54 eV-488 nm emission) can be observed in the emission spectra of MOSLED capacitors of similar type to the waveguides reported here [18]. As stated before, above the EL threshold, the I(V) characteristics are well within the Fowler-Nordheim tunnelling dependence (see inset of figure 4(a)).…”

Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes

“…At larger currents, we observed some signs of the cooperative up-conversion. 26 High driving voltages (Fig. 2) along with the presence of the multiple Er peaks indicate that Er emission is mainly due to direct impact excitation of Er ions and not to indirect Er excitation via energy transfer from Si-NCs.…”

Polycrystalline Er-doped Y3Ga5O12 nanofilms fabricated by atomic layer deposition on silicon at a low temperature and the exploration on electroluminescence performance

“…[7][8][9] Er 3+ ions are predestined for telecommunication applications due to the coincidence between their ∼1.53 μm emission from the 4 I 13/2 → 4 I 15/2 transition and the low-loss window in silica; Er-doped materials have been paid special attention to exploit efficient emitters. [10][11][12] However, the improvement of EL performance among these Si-based MOSLEDs from RE-doped materials has stagnated, which mainly resuls from the impact excitation of the luminescence centre by hot electrons and requires a minimum acceleration electric field and distance. 13 To overcome these obstacles, the focus has shifted to alternative host materials and/or fabrication methods to develop suitable Si-based matrices with more excitable Er 3+ ions.…”