Polycrystalline Er-doped Y₃Ga₅O₁₂ nanofilms fabricated by atomic layer deposition on silicon at a low temperature and the exploration on electroluminescence performance

Abstract

Polycrystalline erbium-doped Y3Ga5O12 garnet (YGG) nanofilms are deposited by atomic layer deposition on Si substrates after annealing down to 800 °C, based on which the ~1.53 μm electroluminescence (EL) devices...

Bright white electroluminescence from polycrystalline dysprosium-doped yttrium gallium garnet nanofilms fabricated by atomic layer deposition on silicon

“…The threshold crystallization temperature for the YGG nanolaminates is 800 °C and is not correlated with the composition, which is consistent with previous results. 26…”

“…† The threshold crystallization temperature for the YGG nanolaminates is 800 °C and is not correlated with the composition, which is consistent with previous results. 26 The SEM images of A 2 nanofilms annealed from 700 °C to 1100 °C are shown in Fig. 2(a-e).…”

“…All devices present the same I-V characteristics of MOS structures as the previously reported RE-doped oxide devices. 26,30 The small background current under a low electric field is not sufficient for EL excitation. Above a threshold voltage of ∼30 V and the correlated current of 10 −5 A, a considerable amount of electrons is injected into the oxide nanolaminates and the current increases exponentially with the voltage, while the white EL emission is observed through the AZO electrode.…”

“…Similar to previous reports, 26 the YGG:Dy nanofilms were grown using a thermal ALD system (4-inch chamber, MNT Micro and Nanotech Co., Ltd) on an n-type silicon ( phosphorus-doped, 2-5 Ω cm) substrate at 350 °C. The β-diketonate chelates Y(thd) 3 and Dy(thd) 3 (thd: 2,2,6,6-tetramethyl-3,5-heptanedione, 99.9%, Strem Chemicals, heated to 195 °C and 210 °C, respectively), Ga(C 2 H 5 ) 3 [triethyl-gallium, 99.9999%, Nanjing Aimouyuan Co., Ltd, maintained at room temperature (RT)] and ozone were used as the precursors.…”

“…The nanolaminates (composed of Ga 2 O 3 interlayers of 0.5/1/1.5/2 nm with the growth cycles of 11/22/32/43, and Y 2 O 3 interlayers inserted with 2 Dy 2 O 3 cycles in the middle) with the designed Y/Ga ratios of 0.7, 0.8 and 0.9 were labeled A 1 , A 2 and A 3 , respectively. According to the Rutherford backscattering spectrometry results in previous research, 26 these Y/Ga ratios (y) approach stoichiometry and the corresponding fitting results of 0.55, 0.61 and 0.82 are used to denote the YGG:Dy nanolaminates in the following experiments. The nanolaminates with the optimum Y/Ga ratio approaching stoichiometry and the Ga 2 O 3 interlayer thickness of d = 0.5, 1.5 and 2 nm were labeled B 1 , B 2 and B 3 .…”