Er‐Doped MgAl2O4 Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition
Zhimin Yu,
Xinliang Guo,
Zengxin Yan
et al.
Abstract:Er3+‐doped polycrystalline MgAl2O4 (MAO:Er) spinel nanofilms are deposited via atomic layer deposition, and the metal‐oxide–semiconductor light emitting devices are fabricated. The crystallinity and morphology of the MAO:Er nanofilms are explored by modifying the annealing temperatures, Al2O3/MgO ratios and Er2O3 dopant cycles. The similar electroluminescence (EL) emissions peaking at 1530 nm indicates the identical crystal field environment for the doped Er3+ ions. The concentration quenching is verified to o… Show more
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