Bright white electroluminescence from polycrystalline dysprosium-doped yttrium gallium garnet nanofilms fabricated by atomic layer deposition on silicon

Zhang, Yu; Ye, Zejun; Yang, Yang; Sun, Jian

doi:10.1039/d3nr00921a

Nanoscale

2023

DOI: 10.1039/d3nr00921a

|View full text |Cite

Bright white electroluminescence from polycrystalline dysprosium-doped yttrium gallium garnet nanofilms fabricated by atomic layer deposition on silicon

Yu Zhang

Zejun Ye

Yang Yang

et al.

Abstract: Bright white emission is obtained under electrical excitation from the dysprosium doped Y3Ga5O12 garnet (YGG:Dy) nanofilms fabricated by atomic layer deposition on silicon substrates. The electroluminescence (EL) composed of the...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Yu,

Guo,

Yan

et al. 2024

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

Er3+‐doped polycrystalline MgAl2O4 (MAO:Er) spinel nanofilms are deposited via atomic layer deposition, and the metal‐oxide–semiconductor light emitting devices are fabricated. The crystallinity and morphology of the MAO:Er nanofilms are explored by modifying the annealing temperatures, Al2O3/MgO ratios and Er2O3 dopant cycles. The similar electroluminescence (EL) emissions peaking at 1530 nm indicates the identical crystal field environment for the doped Er3+ ions. The concentration quenching is verified to occurs via the energy transfer among the neighboring Er3+ ions. The optimal device (800 °C‐annealed, Al2O3/MgO ratio close to stoichiometry, Er3+: 1.85 mol%) yields the highest external quantum efficiency of 28%, the power efficiency of 0.32% and the optical power density of 14.62 mW cm−2. The smooth MAO:Er spinel nanofilms with the low refractive index and high resistance ensure the highly efficient light extraction and the generation of energetic electrons for the impact excitation of Er3+ ions. The trap‐assisted tunneling under operation electric field dominates the conduction mechanism for the EL emissions. The estimated decay lifetime of 1154.4 µs and a large‐stimulated emission cross‐section in the order of 10−15–10−14 cm2 are revealed from the EL emissions. Intense near‐infrared emissions from these Si‐based MAO:Er devices have great potential in the optoelectronic applications.

show abstract

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Yu,

Guo,

Yan

et al. 2024

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Bright white electroluminescence from polycrystalline dysprosium-doped yttrium gallium garnet nanofilms fabricated by atomic layer deposition on silicon

Abstract: Bright white emission is obtained under electrical excitation from the dysprosium doped Y3Ga5O12 garnet (YGG:Dy) nanofilms fabricated by atomic layer deposition on silicon substrates. The electroluminescence (EL) composed of the...

Cited by 1 publication

References 50 publications

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Contact Info

Product

Resources

About

Bright white electroluminescence from polycrystalline dysprosium-doped yttrium gallium garnet nanofilms fabricated by atomic layer deposition on silicon

Abstract: Bright white emission is obtained under electrical excitation from the dysprosium doped Y3Ga5O12 garnet (YGG:Dy) nanofilms fabricated by atomic layer deposition on silicon substrates. The electroluminescence (EL) composed of the...

Cited by 1 publication

References 50 publications

Er‐Doped MgAl2O4 Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Er‐Doped MgAl2O4 Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Contact Info

Product

Resources

About

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition

Er‐Doped MgAl₂O₄ Nanofilms Enabling Highly Efficient Near‐Infrared Electroluminescence from the Silicon‐Based MOS Devices Fabricated by Atomic Layer Deposition