Electro-thermal reliability study of GaN high electron mobility transistors

Chatterjee, Bikramjit; Lundh, James Spencer; Dallas, James; Kim, H.; Choi, Sukwon

doi:10.1109/itherm.2017.7992627

Cited by 16 publications

(15 citation statements)

References 18 publications

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“…This leads to formation of a nanoscale hotspot [170,[172][173][174] subject to extreme local heat flux (>1 MW/cm 2 ). According to fully coupled electrothermal simulation [158,175,178] shown in Fig. 12(a), the domain size of the peak heat generation zone can be less than 10 nm Â 50 nm, which is in agreement with theoretical predictions in literature [172,179].…”

Section: Nanoscopic Heat Flow Constriction In Wide Bandgapsupporting

confidence: 87%

“…This study [184] has investigated the self-heating behavior of a GaN HEMT fabricated on a Si substrate operating under high V DS -low I DS conditions that are expected to cause non-Fourier thermal transport. A near-ultraviolet (UV) thermoreflectance imaging technique and a coupled 3D electrothermal model [178] that accounts for ballistic-diffusive thermal transport effects were used to study amplified heating beyond predictions solely based on the Fourier's law of heat conduction.…”

Section: Nanoscopic Heat Flow Constriction In Wide Bandgapmentioning

confidence: 99%

“…The coupled electrothermal modeling scheme was similar to that in Refs. [158] [167], and [178] but was extended to three dimensions. This device model was developed to validate the near-UV thermoreflectance results.…”

Section: Nanoscopic Heat Flow Constriction In Wide Bandgapmentioning

confidence: 99%

See 2 more Smart Citations

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Warzoha

Wilson

Donovan

et al. 2021

Journal of Electronic Packaging

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This review introduces relevant nanoscale thermal transport processes that impact thermal abatement in power electronics applications. Specifically, we highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices. This includes those mechanisms that impact thermal transport through: (1) substrates, (2) interfaces and 2-D materials and (3) heat spreading materials. For each material layer, we provide examples of recent works that (1) demonstrate improvements in thermal performance and/or (2) improve our understanding of the relevance of nanoscale thermal transport across material junctions. We end our discussion by highlighting several additional applications that have benefited from a consideration of nanoscale thermal transport phenomena, including RF electronics and neuromorphic computing.

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Section: Nanoscopic Heat Flow Constriction In Wide Bandgapsupporting

confidence: 87%

Section: Nanoscopic Heat Flow Constriction In Wide Bandgapmentioning

confidence: 99%

See 1 more Smart Citation

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Warzoha

Wilson

Donovan

et al. 2021

Journal of Electronic Packaging

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“…The GaN channel temperature increased with the power density increase. It should be noted that the device shows different temperature when biased at the same power density with different V GS , which is also found in other literatures [ 15 , 23 , 24 ]. The device biased at V GS = 6 V had higher current and lower V DS under same power density, leading to a lower electric field strength and lower Joule heat.…”

Section: Resultssupporting

confidence: 82%

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

et al. 2022

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In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region. It was found that the thermal resistance (Rth) of the p-GaN HEMT device increased with the increase of channel temperature. The Rth dependence on the temperature was well approximated by a function of Rth~Ta (a = 0.2). The three phonon Umklapp scattering, point mass defects and dislocations scattering mechanisms are suggested contributors to the heat transfer process for the p-GaN HEMT. The impact of bias conditions and gate length on the thermal characteristics of the device was investigated. The behaviour of temperature increasing in the time domain with 50 µs pulse width and different drain bias voltage was analysed. Finally, a field plate structure was demonstrated for improving the device thermal performance.

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“…However, the very high level of power density obtained for GaN HEMTs is susceptible to cause important self‐heating of the devices that in turn causes performance degradation and reliability issues . While self‐heating can be mitigated by technological choices or ensuring high‐efficiency operations, the modeling of GaN HEMTs junction temperature is crucial to design integrated circuits that fully exploit the capabilities of this technology.…”

Section: Introductionmentioning

confidence: 99%

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

Cutivet

Bouchilaoun

Hassan

et al. 2018

Phys. Status Solidi A

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This paper reports on the thermal impedance measurement of GaN highelectron-mobility-transistors (HEMTs) using frequency-resolved gate resistance thermometry. Corrections methods are used to enable measurement on a very broad frequency range up to the MHz range. Transposition to timedomain is then conducted and allows, for the first time to the author's knowledge, a full determination of the device's thermal impedance with a time-resolution down to 60 ns and no limitation on the maximum time range with a single measurement technique. Measurements are performed for HEMTs with different gate-lengths and compared with literature. The experimental results demonstrate the validity and interest of the technique for the thermal impedance extraction of GaN based devices.

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Electro-thermal reliability study of GaN high electron mobility transistors

Cited by 16 publications

References 18 publications

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution

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