In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.
In this work, a terrain estimation framework is developed for autonomous vehicles operating on deformable terrains. Previous work in this area usually relies on steady state tire operation, linearized classical terramechanics models, or on computationally expensive algorithms that are not suitable for real-time estimation. To address these shortcomings, this work develops a reduced-order nonlinear terramechanics model as a surrogate of the Soil Contact Model (SCM) through extending a state-of-the-art Bekker model to account for additional dynamic effects. It is shown that this reduced-order surrogate model is able to accurately replicate the forces predicted by the SCM while reducing the computation cost by an order of magnitude. This surrogate model is then utilized in a unscented Kalman filter to estimate the sinkage exponent. Simulations suggest this parameter can be estimated within 4% of its true value for clay and sandy loam terrains. It is also shown that utilizing this estimated parameter can reduce the prediction errors of the future vehicle states by orders of magnitude, which could assist with achieving more robust model-predictive autonomous navigation strategies.
We investigate thermo-electronic behaviors of flexible AlGaN/GaN heterostructure field-effect transistors (HFETs) for high-power operation of the devices using Raman thermometry, infrared imaging, and current-voltage characteristics. A large negative differential conductance observed in HFETs on polymeric flexible substrates is confirmed to originate from the decreasing mobility of the two-dimensional electron gas channel caused by the self-heating effect. We develop high-power transistors by suppressing the negative differential conductance in the flexible HFETs using chemical lift-off and modified Ti/Au/In metal bonding processes with copper (Cu) tapes for high thermal conductivity and low thermal interfacial resistance in the flexible hybrid structures. Among different flexible HFETs, the ID of the HFETs on Cu with Ni/Au/In structures decreases only by 11.3% with increasing drain bias from the peak current to the current at VDS = 20 V, which is close to that of the HFETs on Si (9.6%), solving the problem of previous flexible AlGaN/GaN transistors.
A new microdisplay backplane architecture integrating digital frame buffers and pulse-width-modulation gray-scale drivers eliminates external electronics in sequential-color single-panel projection systems while lowering power and bandwidth, permitting scalability to high resolutions. It delivers 256 gray levels per color with a native gamma characteristic programmable to values from one to greater than two.
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