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This paper reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and source) at constant gate-to-source voltage. The dependence of gate resistance with temperature is used to extract the thermal impedance of the device in frequency domain via electrical measurement. This new method is validated on common-gate AlGaN/GaN high-electron-mobility transistors on Si substrate under different experimental conditions, which demonstrates its potential to provide complete dynamic self-heating models for power transistors.

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In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based structures on silicon can then be regrown with device quality active layers, as attested by the realization of high electron mobility transistors. Furthermore, the low substrate bowing achieved with these structures is of high interest for the fabrication of large GaN-on-silicon wafers