GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cordier, Y.; Frayssinet, Éric; Chmielowska, Magdalena; Némoz, M.; Courville, Aimeric; Vennéguès, P.; Mierry, P. de; Chenot, Sébastien; Camus, J.; Aissa, K. Ait; Simon, Quentin; Brizoual, L. Le; Djouadi, M.A.; Defrance, N.; Lesecq, Marie; Altuntas, P.; Cutivet, Adrien; Agboton, A.; Jaeger, J.C. de

doi:10.1002/pssc.201300453

Cited by 5 publications

(5 citation statements)

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“…22 Despite these challenges, AlN is also commonly utilized as a buffer or seed layer for the growth of GaN and III-N alloys on Si to prevent liquid Ga at the Si growth surface, facilitate elimination of threading dislocations, and enable growth of compressive GaN to counteract tensile stresses created by the large CTE mismatch between GaN and Si. 21,23 In addition to the above challenges, charge transport and carrier recombination at the AlN/Si interface are a significant consideration for the performance and reliability of AlN/Si and other III-N/Si heterostructure devices. 24,25 However, there have been relatively few investigations of the valence and conduction band alignment at III-N/Si interfaces.…”

Section: Introductionmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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Articles you may be interested inSmall valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689 Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fieldsDependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstructionTo advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050 C) and Al pre-exposures (1-15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be À3.5 6 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 6 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be À2.7 6 0.3 and À0.4 6 0.3 eV, respectively. V C 2015 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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“…Cordier et al [51] performed MBE growth of 1-1.5 μm thick GaN on Si (111) through AlN buffer layers deposited by dc magnetron sputtering at substrate temperatures below 200 °C. The AlN films were composed of nanocolumns of 20-30 nm diameter with a preferential c-axis orientation in the growth direction, but without any noticeable in-plane ordering.…”

Section: Sputtered Aln Buffers For Growth On Si Substratesmentioning

confidence: 99%

“…As discussed above, the AlN nucleation layers deposited by low-temperature sputtering can effectively reduce the density of threading dislocations that act as non-radiative recombination centers and carrier leakage paths, thus deteriorating efficiency of GaN-based optoelectronic devices. The sputtered AlN buffers were found to be effective for improving characteristics of various GaN-based electronic and optoelectronic devices, including LEDs [12][13][14][15][16][17][18][19][20][30][31][32], metalsemiconductor-metal (MSM) UV photodetectors [38], solar cells [34], and FETs [51]. Many groups reported that improved light output power (LOP) can be achieved due to lower TD density in GaN-based LED structures grown on sputtered AlN buffers [12][13][14][15][16][17][18][19][20]31].…”

Section: Device Applications Of Iii-nitrides Grown On Sputtered Aln B...mentioning

confidence: 99%

“…Cordier et al [51] fabricated AlGaN/GaN heterojunction field effect transistors (HFETs) with GaN layers grown by MBE on Si (111) substrates through AlN buffer layers deposited by dc magnetron sputtering. For Al 0.27 Ga 0.73 N-barrier HFETs, a TD dislocation density in the mid 10 9 cm −2 , an electron concentration of (8-9)×10 12 cm −2 and an electron mobility of 1500 to 1900 cm 2 V −1 s −1 , resulting in a sheet resistance as low as 360 Ω/sq were obtained.…”

Section: Device Applications Of Iii-nitrides Grown On Sputtered Aln B...mentioning

confidence: 99%

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Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

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This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

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“…In recent years, aluminum nitride has been of particular interest since it is a large band gap material that is desirable for its high resistivity and piezoelectric coupling coefficient. 92 AlN can be deposited by several methods such as molecular beam epitaxy (MBE) and physical vapor deposition (PVD), 93 but neither of these techniques allows for the precise thickness and conformality control of ALD.…”

Section: Introductionmentioning

confidence: 99%

Design and development of group 13 precursors for improved vapour deposition of metal nitride thin films

Buttera¹

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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Cited by 5 publications

References 6 publications

Band alignment at AlN/Si (111) and (001) interfaces

Band alignment at AlN/Si (111) and (001) interfaces

Emergence of high quality sputtered III-nitride semiconductors and devices

Design and development of group 13 precursors for improved vapour deposition of metal nitride thin films

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