Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Altuntas, P.; Lecourt, F.; Cutivet, Adrien; Defrance, N.; Okada, Étienne; Lesecq, Marie; Rennesson, S.; Agboton, A.; Cordier, Y.; Hoel, Virginie; Jaeger, Jean-Claude de

doi:10.1109/led.2015.2404358

Cited by 59 publications

(24 citation statements)

References 10 publications

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“…With the gate length L g of 250 nm, the L g / d aspect ratio equals 16 for the 14 nm barrier ( d = 15.5 nm) and is close to the reported limit L g / d = 15 in terms of short channel effects . Recently, 75 nm gate devices have been reported on the same structure with f t / f max of 116/150 GHz . A P OUT of 2.7 W mm −1 (2.55 W mm −1 ) was obtained with a PAE of 12.5% (14%) at V ds = 25 V (20 V).…”

Section: High Frequency Devices With Thin Barrierssupporting

confidence: 74%

“…Power densities are reported as a function of the gate length. Trends appear with the gate length except for the PAE of the 75 nm gate device . The data from Refs.…”

Section: High Frequency Devices With Thin Barriersmentioning

confidence: 97%

“…The data from Refs. and have been obtained with heterostructures grown using the same technique and Al content in the barriers. We assume that crystal quality, buffer resistivity, and RF losses are similar in these structures.…”

Section: High Frequency Devices With Thin Barriersmentioning

confidence: 99%

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Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier

2015

Physica Status Solidi (a)

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Phone: þ33 493 954 200, Fax: þ33 493 958 361In this paper, a review of the different buffer layers and heterostructures developed for Al(Ga)N/GaN high electron mobility transistors (HEMTs) on silicon substrate is presented. The difficulties associated with the barrier thinning and the rise of the Al content are discussed. Finally, we compare the DC output characteristics and the small and large signal RF performances of thin barrier AlGaN/GaN HEMTs, thick barrier gate recessed ones, and ultra-thin AlN barrier devices.

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Section: High Frequency Devices With Thin Barrierssupporting

confidence: 74%

“…Power densities are reported as a function of the gate length. Trends appear with the gate length except for the PAE of the 75 nm gate device . The data from Refs.…”

Section: High Frequency Devices With Thin Barriersmentioning

confidence: 97%

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Al(Ga)N/GaN high electron mobility transistors on silicon

Cordier

2015

Physica Status Solidi (a)

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“…The device fabrication starts with Ti/Al/Ni/Au ohmic contacts deposited by e‐beam evaporation . This is followed by rapid thermal annealing (RTA) at 850 °C for 30 s. Devices are isolated by N + ion multiple implantations.…”

Section: Transistor Fabrication and Process Transfer Onto Flexible Tapementioning

confidence: 99%

Recent improvements of flexible GaN-based HEMT technology

Mhedhbi

Lesecq

Altuntas

et al. 2017

Phys. Status Solidi A

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This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the transfer process. In this paper, it is shown that the device transferred onto the tape with higher thermal conductivity exhibits, at V DS ¼ 5 V, a better linear power gain G p by 31.6% (15.8 dB instead of 12 dB), and a power added efficiency PAE rise by 111% (29.6 instead of 14%) associated with an enhancement of saturated power P sat by 281% (420 instead of 110 mW mm À1 ). Optimizing the flexible tape thermal properties and dealing with reliability issues of GaN layer transfer technology, provide a promising way in the frame of flexible electronics, where medium power, high frequency, and flexibility are needed.

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“…Aluminum nitride (AlN) is today a widely used wide band gap semiconductor already integrated in different applications: for high power and high frequency electronics along with gallium nitride (GaN) and its alloys; and also for optoelectronic applications such as UV and visible LEDs as well as laser diodes . On the other hand, graphene presents many interesting properties, such as high charge carrier mobility, high thermal conductivity, optical transparency, and flexibility .…”

Section: Introductionmentioning

confidence: 99%

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Dagher

Matta

Parret

et al. 2017

Phys. Status Solidi A

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Phone: þ33 4 93 95 78 30, Fax: þ33 4 93 95 83 61Graphene and AlN are promising materials, interesting to combine together. In this study, we will present first results for direct growth of graphene on bulk AlN and on AlN templates using chemical vapor deposition, including the annealing of these substrates at high temperatures. Atomic force microscopy (AFM) enabled us to study the evolution of the AlN surface morphology after annealing and growth. Few-layer graphene deposition is demonstrated on the basis of X-ray photoemission and Raman spectroscopy.AFM view of graphene wrinkles on the N-face of bulk AlN.

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Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Cited by 59 publications

References 10 publications

Al(Ga)N/GaN high electron mobility transistors on silicon

Al(Ga)N/GaN high electron mobility transistors on silicon

Recent improvements of flexible GaN-based HEMT technology

High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

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