Recent improvements of flexible GaN-based HEMT technology

Mhedhbi, S.; Lesecq, Marie; Altuntas, P.; Defrance, N.; Cordier, Y.; Damilano, B.; Jimenéz, Gema Tabares; Ebongue, A.; Hoel, Virginie

doi:10.1002/pssa.201600484

Cited by 20 publications

(21 citation statements)

References 9 publications

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“…[1][2][3] Over the last decade, gallium nitride (GaN) devices have been fundamental and essential elements to meet these requirements for high-power amplification of the radio frequency (RF) signal in MHz to GHz frequencies and beyond, especially for military applications. [16][17][18][19][20][21] Growth of GaN on Si simplifies the substrate etching removal process and has hence been the most widely used approach for development of transferred GaN electronics. [16][17][18][19][20][21] Growth of GaN on Si simplifies the substrate etching removal process and has hence been the most widely used approach for development of transferred GaN electronics.…”

Section: Flexible Gallium Nitridementioning

confidence: 99%

“…[4][5][6] As new demands for high-power conformal and flexible electronics for future fifth www.advmat.de www.advancedsciencenews.com lift-off of the GaN film [13][14][15] or etching to chemically remove the substrate. [16][17][18][19][20][21] Growth of GaN on Si simplifies the substrate etching removal process and has hence been the most widely used approach for development of transferred GaN electronics. However, the GaN material grown on Si is typically of lower quality than when grown on sapphire or SiC due to the significant structural and lattice mismatch.…”

Section: Flexible Gallium Nitridementioning

confidence: 99%

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio-frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high-frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical-free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state-of-the-art values for electrical performance, with electron mobility exceeding 2000 cm V s and sheet carrier density above 1.07 × 10 cm . The influence of strain on the RF performance of flexible GaN high-electron-mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.

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Section: Flexible Gallium Nitridementioning

confidence: 99%

Section: Flexible Gallium Nitridementioning

confidence: 99%

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

et al. 2017

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“…6 One interesting way to make these hybrid systems is to grow and process the InGaN-based solar cell, release it from the growth wafer and bond it to a foreign substrate. Different approaches for the separation of epi-layers have been demonstrated including laser lift-off 7 and chemical etching of the growth substrate 8 or a sacrificial layer. 9 These techniques have many limitations in practice, notably high cost, long process times, and limitations in size.…”

mentioning

confidence: 99%

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Ayari

Sundaram

et al. 2018

ACS Photonics

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A practical III-nitride photovoltaic (PV) application consists of transfer to a foreign substrate with enhanced functionality and integration with mature group IV or III−V based solar cell technologies. This requires a lift-off technique compatible with good quality III−N materials, with photovoltaic device fabrication and with subsequent bonding on a heterogeneous substrate. Here, we demonstrate the first InGaN-based solar cells on a 2 in. h-BN/sapphire wafer and their transfer to glass with a backside reflector. III−N solar cells with various sizes and designs are processed and characterized on a full 2 in. wafer giving performances comparable to similar devices on sapphire. The subsequent crack-free transfer of the solar cells, enabled by Van der Waal bonded 2D layered h-BN, to a substrate with a backside reflector yields an increase in the short circuit current density of up to 20%. This demonstration of transferred InGaN-based solar cells on foreign substrates while increasing performance represents a major advance toward lightweight, low cost, and high efficiency photovoltaic applications.

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“…[107] Because AlGaN/GaN HEMT heterostructures can be readily grown on Si substrates and mature techniques to selectively remove the low-cost Si substrate are available, substrate removal has been widely used in most reported flexible microwave GaN HEMTs after the first demonstration of GaN release. [64,92,108,109] Furthermore, processes like annealing and passivation can also be readily applied to GaN on Si wafers due to their high-temperature process tolerance. For these reasons, GaN-based HEMTs are typically fabricated on their original substrate using well-established techniques and subsequently released with the front side of the device protected.…”

Section: Flexible Microwave Transistors Based On Compound Semiconductorsmentioning

confidence: 99%

“…Recently, a method of directly using commercially available heat dissipation tapes as the flexible substrate to enhance heat dissipation and thus the performance of flexible GaN HEMT was reported. [92,109] In this study, GaN HEMTs fabricated on two almost identical GaN-on-Si wafers were released using sapphire as the temporary handling substrate. The two groups of released GaN HEMTs were transferred to two types of 3M flexible tapes that had a thermal conductivity of 0.8 and 1.6 W m −1 K −1 , respectively.…”

Section: Flexible Microwave Transistors Based On Compound Semiconductorsmentioning

confidence: 99%

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Zhang

Lan

Qiu

et al. 2020

Adv Materials Technologies

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2000759 (6 of 38) www.advmattechnol.de Figure 4. Flexible microwave transistors. a) Schematic illustration of fabrication process flow of flexible microwave TFTs based on Si nanomembrane. Left, two-step transfer-printing of Si nanomembrane on flexible substrate with assist of PDMS stamp. Right, direct flip-printing Si nanomembrane on flexible substrate. Reproduced with permission. [72] Copyright 2010, Wiley-VCH. b) Flexible microwave Si TFT using direct flip-printing approach in (a). Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [75] Copyright 2016, Springer Nature. c) Flexible microwave Si TFT using two-step approach in (a). Reproduced with permission. [72] Copyright 2010, Wiley-VCH. d) Cross-section SEM image of flexible Si MOSFET made by thinning a 65 nm node SOI wafer. Reproduced with permission. [45] Copyright 2013, American Institute of Physics. e) Optical images of flexible GaAs HBT on cellulose nanofibril (CNF) substrate. Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [90] Copyright 2015, Springer Nature. f) Schematic illustration and normalized on-state conductance (G/G 0), maximum transconductance (g m /g m0) of flexible InAs MOSFET with self-aligned gate. Reproduced with permission. [53] Copyright 2012, American Chemical Society. g) Cross-section schematic illustration and gain curves of flexible InGaAs/InAlAs HEMT as function of frequency under various bending conditions. Reproduced with permission. [91] Copyright 2013, American Institute of Physics. h) Output power density (P OUT), power gain (G P) and power-added efficiency (PAE) of the flexible GaN HEMT on thermal conductive tape with thermal conductivity of 1.6 W m −1 K −1. Reproduced with permission. [92] Copyright 2017, Wiley-VCH. i) Photography of AlGaN/GaN film grown on BN coated sapphire substrate and printed on flexible tape. Reproduced with permission. [19] Copyright 2017, Wiley-VCH. j) Cross-section schematic illustration of bottom gate flexible graphene FET (GFET). Reproduced with permission. [93] Copyright 2013, American Chemical Society. k) Cross-section schematic illustration of top gate flexible GFET with self-aligned gate configuration. Reproduced with permission. [94] Copyright 2014, American Chemical Society. l) High-frequency characteristics of flexible GFET with gate length of 50 nm. Reproduced with permission. [95] Copyright 2018, Wiley-VCH. m) Schematic illustration and gain curves of flexible microwave transistor based on MoS 2 as function of frequency. Reproduced with permission. [96] Copyright 2014, Springer Nature. n) High-frequency characteristics of flexible microwave transistor based on black phosphorus (BP) as function of frequency. Reproduced with permission.

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Recent improvements of flexible GaN-based HEMT technology

Cited by 20 publications

References 9 publications

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

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