Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Glavin, Nicholas R.; Chabak, Kelson D.; Heller, Eric R.; Moore, Elizabeth A.; Prusnick, Timothy; Maruyama, Benji; Walker, Dennis E.; Dorsey, Donald L.; Paduano, Qing; Snure, Michael

doi:10.1002/adma.201701838

Cited by 105 publications

(101 citation statements)

References 42 publications

(54 reference statements)

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“…GaN, remarked as a third‐generation semiconductor, has been attracted considerably attentions for the application of light‐emitting diodes (LEDs), photodetectors, high electron mobility transistors, laser diodes, etc. After its development for decades, significant progress for GaN‐based devices has been achieved.…”

Section: Introductionmentioning

confidence: 99%

“…After its development for decades, significant progress for GaN‐based devices has been achieved. In this case, most of them are based on 3D or 1D GaN, and the GaN in these systems depends on its initial properties, such as direct bandgap of ≈3.4 eV, high thermal conductivity of 110 W m −1 K −1 , etc. To break through the initial properties for a broader application, GaN in 2D structure is urgently needed to be developed.…”

Section: Introductionmentioning

confidence: 99%

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Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures

Wang

Zheng

et al. 2019

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2D group‐III nitride materials have shown a great promise for applications in optoelectronic devices thanks to their thickness‐dependent properties. However, the epitaxial growth of 2D group‐III nitrides remains a challenge. In this work, epitaxial growth of 2D GaN with well‐controlled lattice structures and bandgaps is achieved by plasma‐enhanced metal organic chemical vapor deposition via effective regulation of plasma energy and growth temperature. The structure of graphene/2D GaN/Si heterostructures is carefully investigated by high‐resolution transmission electron microscopy. The formation mechanism of the 2D GaN layer is clearly clarified by theoretical calculations. Furthermore, a bandgap for 2D GaN ranging from ≈4.18 to ≈4.65 eV varying with the numbers of layers is theoretically calculated and experimentally confirmed. 2D GaN with well‐controlled lattice structure and bandgap holds great potential for the development of deep ultraviolet light‐emitting diodes, energy conversion devices, etc.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures

Wang

Zheng

et al. 2019

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“…Incorporating growth and processing techniques that are commonplace in the flexible electronics community such as low temperature vacuum deposition or rapid thermal/photonic annealing may provide the mechanisms necessary to incorporate high quality materials on soft and compliant substrates, which cannot accommodate high growth temperatures . Alternatively, the direct transfer of materials synthesized on conventional substrates (i.e., SiO 2 /Si or sapphire) to flexible ones, through 2D van der Waals liftoff using materials such as h ‐BN, have been shown to enable high performing flexible electronic systems and may provide the key to flexible, low power electronics based on elemental 2D materials …”

Section: Electronics and Sensingmentioning

confidence: 99%

Emerging Applications of Elemental 2D Materials

et al. 2019

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As elemental main group materials (i.e., silicon and germanium) have dominated the field of modern electronics, their monolayer 2D analogues have shown great promise for next‐generation electronic materials as well as potential game‐changing properties for optoelectronics, energy, and beyond. These atomically thin materials composed of single atomic variants of group III through group VI elements on the periodic table have already demonstrated exciting properties such as near‐room‐temperature topological insulation in bismuthene, extremely high electron mobilities in phosphorene and silicone, and substantial Li‐ion storage capability in borophene. Isolation of these materials within the postgraphene era began with silicene in 2010 and quickly progressed to the experimental identification or theoretical prediction of 15 of the 18 main group elements existing as solids at standard pressure and temperatures. This review first focuses on the significance of defects/functionalization, discussion of different allotropes, and overarching structure–property relationships of 2D main group elemental materials. Then, a complete review of emerging applications in electronics, sensing, spintronics, plasmonics, photodetectors, ultrafast lasers, batteries, supercapacitors, and thermoelectrics is presented by application type, including detailed descriptions of how the material properties may be tailored toward each specific application.

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“…Therefore, all of the visible light region and a portion of the ultraviolet region can be covered by III‐Ns and their alloys. Recently, III‐Ns have been widely used in radio frequency devices, light‐emitting diodes (LEDs), and laser diodes as optoelectronic materials …”

Section: Introductionmentioning

confidence: 99%

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes

Jia

Ning

Zhang

et al. 2019

Advanced Optical Materials

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some outstanding features, such as a high carrier mobility, [8][9][10] a high thermal conductivity, [11] flexibility, [12] and visible transparency. [13,14] Moreover, it can be used as a removable layer for the epitaxial growth of III-Ns, thus providing the foundation for a new field of transferable and flexible LEDs. [15,16] Recently, graphene has been used as a buffer layer for the van der Waals epitaxy growth of a GaN epilayer to overcome the substantial thermal expansion coefficient and in-plane lattice constant mismatch between the GaN epilayer and sapphire substrate (c-Al 2 O 3 ), which causes a significant strain in the GaN epilayer. However, because the graphene surface lacks dangling bonds, the nucleation of nitrides on graphene is restricted, and clusters are easily formed. [17,18] In this study, theoretical calculations using first-principles calculations based on density functional theory (DFT) were carefully conducted to further examine the formation mechanism of AlN and GaN on graphene. We found that AlN selectively grows on graphene, and we identified its optimal nucleation site. We obtained the adsorption probability of Al atoms at various positions on the graphene CC ring and found that the hollow of the complete graphene CC ring and the center of the broken graphene CC ring are the best adsorption positions under different states of the graphene. Based on this, we innovatively inserted an AlN composite nucleation layer between graphene and GaN, which was grown by metal organic chemical vapor deposition (MOCVD) using time-distributed and constant-pressure (TDCP) growth. The growth process for AlN is divided into three stages. Under the same pressure, different flow rates, and growth temperatures are used for each stage. By controlling the growth time at different flow rates, an AlN composite nucleation layer on graphene can be formed. By introducing the selective nucleation of an AlN composite layer and graphene, the biaxial stress of the GaN film was effectively released, leading to transferable and low density dislocations in the GaN film and the In 0.1 Ga 0.9 N/GaN multiple quantum well structures. Note that LEDs with an ultrahigh light output power (LOP) of 260.5 mW at a small current of 560 mA were achieved. Our study demonstrates a practical application of an AlN composite nucleation layer grown on graphene that may result in A transferable GaN epilayer is grown on an improved aluminum nitride (AlN)/graphene composite substrate. In this study, theoretical calculations using first-principles calculations based on density functional theory are carefully conducted to further examine the formation mechanism of AlN on graphene. AlN selectively grows on graphene via its optimal nucleation site, which leads to the selective nucleation of AlN on graphene via quasi-van der Waals epitaxy. Thus, an AlN composite nucleation layer is innovatively inserted between graphene and GaN, using the time-distributed and constant-pressure growth method by metal organic chemical vapor deposition. Moreover, a hi...

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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Cited by 105 publications

References 42 publications

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures

Emerging Applications of Elemental 2D Materials

Transferable GaN Enabled by Selective Nucleation of AlN on Graphene for High‐Brightness Violet Light‐Emitting Diodes

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