Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Liu, Yuh Shiuan; Haq, A. F. M. Saniul; Kao, Tsung Ting; Mehta, Karan; Shen, Shyh Chiang; Detchprohm, Theeradetch; Yoder, P. Douglas; Dupuis, R. D.; Xie, Haipeng; Ponce, Fernando

doi:10.1016/j.jcrysgro.2016.03.027

Cited by 15 publications

(9 citation statements)

References 21 publications

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“…The lowest specific series resistances reported for III-nitride DBRs are 2 × 10 −4 •cm 2 for a 40 pair Al 0.12 Ga 0.88 N/GaN DBR having a 92 % peak reflectivity and 11 nm stopband width [13], and 7.8 × 10 −4 •cm 2 for a 40 pair DBR using lattice-matched Al 0.82 In 0.18 N/GaN and having a peak reflectivity of 99.9 % and a 22 nm stopband width [11], [14]. The narrow stopband widths are a result of the large number of pairs needed to achieve high reflectivity, due to the relatively small refractive index contrasts for the AlInN/GaN and the low Al-composition AlGaN/GaN material pairs.…”

Section: Introductionmentioning

confidence: 97%

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

Hjort

Hashemi

Adolph

et al. 2018

IEEE J. Quantum Electron.

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We have demonstrated an electrically conductive ZnO/GaN multilayer structure using hybrid plasma-assisted molecular beam epitaxy. Electrical I-V characteristics were measured through the top three pairs of a six pair ZnO/GaN sample. The total measured resistance was dominated by lateral and contact resistances, setting an upper limit of ∼10 −4 •cm 2 for the vertical specific series resistance of the stack. A strong contribution to the low resistance is the cancellation of spontaneous and piezoelectric polarization that occurs in the in-plane strained ZnO/GaN sample, as shown by electrical simulations. In addition, the simulations show that the actual vertical resistance of the sample could in fact be three orders of magnitude lower and that ZnO/GaN structures with thicknesses fulfilling the Bragg condition should have similar resistance. Our results suggest that ZnO/GaN distributed Bragg reflectors (DBRs) are a promising alternative to pure III-nitride DBRs in GaN-based vertical-cavity surface-emitting lasers.

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Section: Introductionmentioning

confidence: 97%

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

Hjort

Hashemi

Adolph

et al. 2018

IEEE J. Quantum Electron.

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“…There have so far been no reports that demonstrate a resonant-cavity LED (RCLED) operating in the red regime or a RE-semiconductor based RCLED. This is a result of the complexity of achieving a RE-doped GaN LED with a low operation voltage caused by its crystal quality, as well as a conductive DBR, due to the large lattice mismatch and band offset between GaN and AlInGaN-based materials. − …”

Section: Introductionmentioning

confidence: 99%

GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors

Inaba

Tatebayashi

Shiomi

et al. 2020

ACS Appl. Electron. Mater.

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We demonstrate a GaN:Eu,O-based resonant-cavity light emitting diode (RCLED) fabricated with a n-type conductive Al 0.82 In 0.18 N/GaN bottom-distributed Bragg reflector (DBR) and a ZrO 2 /SiO 2 top-DBR and made in order to manipulate both the radiative transition probability of Eu 3+ ions and the light extraction efficiency. Shortening of the lifetime of Eu-related luminescence, along with an improved directionality of the light output, is observed from the RCLED. These factors lead to a 4.8 times enhancement of the output power at room temperature as well as a peak enhancement of the electroluminescence intensity of 10.9 as compared to a conventional GaN:Eu,O-based LED. This is the first demonstration of the red RCLED based on rare-earth-doped GaN and enables a significant enhancement of Eu luminescence of the GaN:Eu,O-based red LED with a high color purity and temperature insensitive emission wavelength.

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“…There are a few reports on electrically conductive Al(Ga)N/GaN DBRs, but their specific series resistances, extracted from IV-characteristics, is in the order of 0.1 Ω cm 2 or above. [18][19][20] The only exception is the recent demonstration of an Al 0.12 Ga 0.88 N/GaN DBR by Liu et al, 21 where the DBR had a specific series resistance of 2 × 10 −4 Ω cm 2 . However, due to the low Alcomposition the stopband width was as narrow as 11 nm and 40 mirror pairs only resulted in a peak reflectivity of 92% at 368 nm.…”

Section: Introductionmentioning

confidence: 99%

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

et al. 2017

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III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch and high refractive index contrast, which could yield a mirror with a broad stopband and a high peak reflectivity using less than 20 DBR-pairs. A crack-free ZnO/GaN DBR was grown by hybrid plasma-assisted molecular beam epitaxy. The ZnO layers were approximately 20 nm thick and had an electron concentration of 1×10 19 cm −3 , while the GaN layers were 80-110 nm thick with an electron concentration of 1.8×10 18 cm −3. In order to measure the resistance, mesa structures were formed by dry etching through the top 3 DBR-pairs and depositing non-annealed Al contacts on the GaN-layers at the top and next to the mesas. The measured specific series resistance was dominated by the lateral and contact contributions and gave an upper limit of ∼10 −3 Ω cm 2 for the vertical resistance. Simulations show that the ZnO electron concentration and the cancellation of piezoelectric and spontaneous polarization in strained ZnO have a large impact on the vertical resistance and that it could be orders of magnitudes lower than what was measured. This is the first report on electrically conductive ZnO/GaN DBRs and the upper limit of the resistance reported here is close to the lowest values reported for III-nitride-based DBRs.

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Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Cited by 15 publications

References 21 publications

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

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