An optically pumped vertical-cavity surface-emitting laser with an electrically conducting n-type distributed Bragg reflector was achieved at 374.9 nm. An epitaxially grown 40-pair n-type AlGaN/GaN distributed Bragg reflector was used as the bottom mirror, while the top mirror was formed by a dielectric distributed Bragg reflector composed of seven pairs of HfO2/SiO2. A numerical simulation for the optical mode clearly demonstrated that a high confinement factor was achieved and the threshold pumping power density at room temperature was measured as 1.64 MW/cm2. The achieved optically pumped laser demonstrates the potential of utilizing an n-type distributed Bragg reflector for surface-emitting optical devices.

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We report an electrically conducting 40-pair silicon doped Al 0.12 Ga 0.88 N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ωcm, near the maximum measured current of 100 mA. Keywords:A3. Metalorganic chemical vapor deposition B1. Nitride B2. Semiconductor III-V material B3. Laser diodes PACS #: 42.55.Px Semiconductor lasers, solid-state lasers 78.66.Fd Optical properties of specific thin films, III-V semiconductors 81.15.Gh Methods of deposition of films and coatings; film growth and epitaxy, Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc. a) Also

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