GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors

Inaba, Tomohiro; Tatebayashi, J.; Shiomi, Kei; Timmerman, Dolf; Ichikawa, Shuhei; Fujiwara, Yoshihiro

doi:10.1021/acsaelm.9b00806

Cited by 18 publications

(9 citation statements)

References 49 publications

(71 reference statements)

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“…Recent numerous GaN-based VCSELs have adopted the AlInN/GaN bottom DBRs to achieve high performances. [78][79][80][81] In 2016, Ikeyama et al proposed a GaN VCSEL with a top 8-pair Nb 2 O 5 /SiO 2 DBR and bottom 46-pair AlInN/GaN DBR. [82] The reflectivity of two DBRs were both designed to be 99.9% at the lasing wavelength of 405.1 nm.…”

Section: Hybrid Dielectric and Alinn/gan Dbrmentioning

confidence: 99%

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Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Section: Hybrid Dielectric and Alinn/gan Dbrmentioning

confidence: 99%

“…Recent numerous GaN‐based VCSELs have adopted the AlInN/GaN bottom DBRs to achieve high performances. [ 78–81 ] In 2016, Ikeyama et al. proposed a GaN VCSEL with a top 8‐pair Nb 2 O 5 /SiO 2 DBR and bottom 46‐pair AlInN/GaN DBR.…”

Section: Distributed Bragg Resonatorsmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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“…The Fabry Perot (FP) planar cavity is a significant element in optical devices and is generally composed of dual distributed Bragg reflectors (DBRs). Inaba et al demonstrated that dual DBRs can shorten the lifetime of Eu-related luminescence, improve the directionality of light output, and enhance the output power by formation of GaN:Eu,O-based RCLEDs [21]. Besides, Oh et al reported that when the reflectivity of the DBRs was increased, the linewidth narrowed.…”

Section: Indexmentioning

confidence: 99%

“…In our previous works, we realized blue-green VCSELs, green resonant cavity light-emitting diodes (RCLEDs) with a high Q factor (~6000) [23][24][25][26]. At present, GaN:Eu,O and AlInGaP-based red RCLEDs have been reported [9,21,27]. However, electrically injected red InGaN-based RCLEDs have not been fabricated until now because some critical difficulties.…”

Section: Ingan-based Orange-red Resonant Cavitymentioning

confidence: 99%

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Mei

Iida

et al. 2022

J. Lightwave Technol.

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InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.

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“…The main bottleneck is that most GaN-based RCLEDs are grown on sapphire substrates, resulting in several issues. For GaN-based RCLEDs with hybrid distributed Bragg reflectors (DBRs), about 40 pairs of GaN/AlGaN or GaN/InAlN DBRs are usually grown underneath the quantum wells (QWs) [ 9 , 10 , 11 , 12 ], which may not only induce high tensile stress and even micro-cracks, but also increase the dislocation density, seriously reducing the internal quantum efficiency [ 13 ]. For GaN-based RCLEDs with double-sided dielectric DBRs, the laser lift-off process is usually used to remove the sapphire substrates [ 14 , 15 ], which often causes high stress and even cracks, greatly affecting the device performance and yield.…”

Section: Introductionmentioning

confidence: 99%

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

et al. 2021

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GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) have been successfully fabricated through wafer bonding and Si substrate removal. By combining the chemical mechanical polishing technique, we obtained a roughness of about 0.24 nm for a scan area of 5 μm × 5 μm. The double-sided dielectric distributed Bragg reflectors could form a high-quality optical resonant cavity, and the cavity modes exhibited a linewidth of 1 nm at the peak wavelength of around 405 nm, corresponding to a quality factor of 405. High data transmission in free space with an opening in the eye diagram was exhibited at 150 Mbps, which is limited by the detection system. These results showed that GaN-based RCLEDs grown on Si are promising as a low-cost emitter for visible light communications in future.

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GaN:Eu,O-Based Resonant-Cavity Light Emitting Diodes with Conductive AlInN/GaN Distributed Bragg Reflectors

Cited by 18 publications

References 49 publications

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

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