InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Abstract

InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

“…Gallium nitride-based optoelectronic devices were extensively used as light-emitting diodes (LEDs), resonant-cavity light-emitting diodes (RC-LEDs), − and vertical-cavity surface-emitting lasers (VCSELs) . Face-up type structures, flip chip-type structures, , and vertical-type structures have been reported for different current injection processes.…”