Electrical tuning of magnetism in Fe3O4/PZN–PT multiferroic heterostructures derived by reactive magnetron sputtering

Liu, Ming; Obi, Ogheneyunume; Cai, Zhuhua; Lou, Jing; Yang, Guomin; Ziemer, Katherine S.; Sun, Nian X.

doi:10.1063/1.3354104

Cited by 133 publications

(105 citation statements)

References 24 publications

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“…where λ s is the magnetostriction constant of magnetic materials, Y is Young's modulus, d is the piezoelectric coefficient of ferroelectric materials, which could be positive (tensile) or negative (compressive), and M s is the magnetization [27]. Therefore, large λ s and d and small M s are required to achieve strong ME couplings.…”

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confidence: 99%

Voltage control of magnetism in multiferroic heterostructures

Liu

Sun

2014

Phil. Trans. R. Soc. A.

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131

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Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

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confidence: 99%

Voltage control of magnetism in multiferroic heterostructures

Liu

Sun

2014

Phil. Trans. R. Soc. A.

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131

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“…Magnetic-piezoelectric heterostructures with strong converse ME coupling leads to effective voltage control of magnetism [93][94][95][96][97] such as voltage tunable magnetic hysteresis loops, 96 voltage tunable permeability, 98 and voltage control of ferromagnetic resonance (FMR) frequency. [97][98][99][100][101][102][103][104][105][106][107][108] A giant voltage tunable ferromagnetic resonance frequency from 1.7 to 7.6 GHz observed in FeGaB/PZN-PT (lead zinc niobatelead titanate) is shown in Figure 29.…”

Section: Voltage Tunable Magneto-electric Rf/microwave/millimeter Wavmentioning

confidence: 99%

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

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144

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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“…The MERAM element 3,4 combines bilayered ferromagnetic films (the free layer and pinned layer in a spin-valve structure) with a ferroelectric layer based on the giant magnetoresistance (GMR) effect or tunneling magnetoresistance (TMR) effect. Recently, many publications [5][6][7][8][9][10][11][12][13] have studied the E-fieldcontrolled magnetization change in the multiferroic heterostructures, [14][15][16] which consist of a monolayer magnetic film and ferroelectric 17 layer. However, much less studies have been done on the bilayered ferromagnetic films.…”

Section: Introductionmentioning

confidence: 99%