Voltage control of magnetism in multiferroic heterostructures

Liu, Ming; Sun, Nian X.

doi:10.1098/rsta.2012.0439

Cited by 132 publications

(75 citation statements)

References 41 publications

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“…[1][2][3][4][5][6][7][8][9][10] Multiferroic heterostructures, simultaneously exhibiting ferromagnetism, ferroelectricity and ferroelasticity, have attracted great interest due to the strong strainmediated magnetoelectric (ME) coupling and shown promising applications for tunable magnetic devices. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] More interestingly, in these structures, a single control parameter of voltage is used to induce a lattice strain through the converse piezoelectric effect in the ferroelectric phase, which in turn tailors the magnetic properties in the mechanically coupled magnetic phase through the magnetoelastic effect. 25,[30][31][32][33][34][35][36][37][38][39][40][41] Thus, devices made of such heterostructures are ultrafast, compact, quiet, energy efficient and susceptible to be integrated into electronic circuits.…”

Section: Introductionmentioning

confidence: 99%

Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

Liu

Nan

et al. 2016

NPG Asia Mater

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In this work we addressed a key challenge in realizing multiferroics-based reconfigurable magnetic devices, which is the ability to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage. Three possible non-volatile switching mechanisms have been demonstrated, arising from the nature of the domain states in pervoskite PZN-PT crystal that the ferroelectric polarization reversal is partially coupled to the ferroelastic strain. Electric impulse non-volatile control of magnetic anisotropy in FeGaB/PZN-PT and domain distribution of FeGaB during the ferroelectric switching have been observed, which agrees very well with simulation results. These approaches provide a platform for realizing electric impulse non-volatile tuning of the order parameters that are coupled to the lattice strain in thin-film heterostructures, showing great potentials in achieving reconfigurable, compact, light-weight and ultra-low-power electronics.

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Section: Introductionmentioning

confidence: 99%

Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

Liu

Nan

et al. 2016

NPG Asia Mater

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“…2 There are numerous reports on voltage control of magnetization (see, e.g., reviews, 1-4 references therein, and recent Refs. 5 11), whereas for electric field effects on the anisotropic [12][13][14][15][16][17][18][19][20] and giant 13,21,22 [4][5][6][7][8][9][10][11]13,14,16,17,20 In such structures, upon application of an electric field, the piezoactive substrate induces a strain in the ferro(i)magnetic film and hence modifies its magnetic properties due to the magnetoelastic coupling effect. The (011) cut is particularly suitable because of the possibility of obtaining a high and well-defined uniaxial anisotropy by inducing simultaneously compressive and tensile strains in orthogonal [100] (x) and [011] (y) in-plane directions due to the different signs of d 31 and d 32 piezocoefficients.…”

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confidence: 99%

Electric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstrates

Tkach

Kehlberger

Büttner

et al. 2015

Applied Physics Letters

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This study reports the magnetotransport and magnetic properties of 20 nm-thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The longitudinal magnetoresistance (MR) of the Ni films on (011) PMN-PT, measured at room temperature in the magnetic field range of −0.3 T < μ0H < 0.3 T, is found to depend on the crystallographic direction and polarization state of piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by factor of 20 for the current along [100] of PMN-PT and slightly increases for the [011¯] current direction. Simultaneously, a strong increase (decrease) in the field value, where the MR saturates, is observed for the [011¯] ([100]) current direction. The anisotropic magnetoresistance is also strongly affected by the remanent strain induced by the electric field pulses applied to the PMN-PT in the non-linear regime revealing a large (132 mT) magnetic anisotropy field. Applying a critical electric field of 2.4 kV/cm, the anisotropy field value changes back to the original value, opening a path to voltage-tuned magnetic field sensor or storage devices. This strain mediated voltage control of the MR and its dependence on the crystallographic direction is correlated with the results of magnetization reversal measurements.

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“…However, strain-mediated magnetoelectric coupling cannot rotate the magnetization over a full 1801, 128 which is a requirement for deterministic switching in memory device structures. 129 …”

Section: Composite Structuresmentioning

confidence: 99%

Multiferroic Materials: Physics and Properties

Palstra

Blake

2016

Reference Module in Materials Science and Materials Engineering

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Multiferroics are materials in which magnetism and ferroelectricity coexist. They are of fundamental interest to understand electronic behavior coupling magnetic interactions and electric dipolar order. Moreover, they are of applied interest because they allow various types of novel magnetic and electric device structures. We distinguish two important classes of multiferroic materials and discuss mechanisms and materials belonging to each class separately. In the first group of multiferroics, magnetization and polarization arise independently from each other. In the second category of multiferroics, ferroelectricity is induced by magnetic order, resulting in strong magnetoelectric coupling. We also briefly discuss multiferroic thin film heterostructures showing interfacial magnetoelectric coupling interactions with potential applications in memory devices

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Voltage control of magnetism in multiferroic heterostructures

Cited by 132 publications

References 41 publications

Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

Electric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstrates

Multiferroic Materials: Physics and Properties

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