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Spintronics is a research field that aims to understand and control spins on the nanoscale and should enable next-generation data storage and manipulation. One technological and scientific key challenge is to stabilize small spin textures and to move them efficiently with high velocities. For a long time, research focused on ferromagnetic materials, but ferromagnets show fundamental limits for speed and size. Here, we circumvent these limits using compensated ferrimagnets. Using ferrimagnetic Pt/GdCo/TaO films with a sizeable Dzyaloshinskii-Moriya interaction, we realize a current-driven domain wall motion with a speed of 1.3 km s near the angular momentum compensation temperature (T) and room-temperature-stable skyrmions with minimum diameters close to 10 nm near the magnetic compensation temperature (T). Both the size and dynamics of the ferrimagnet are in excellent agreement with a simplified effective ferromagnet theory. Our work shows that high-speed, high-density spintronics devices based on current-driven spin textures can be realized using materials in which T and T are close together.

Magnetic skyrmions are topological quasiparticles of great interest for data storage applications because of their small size, high stability, and ease of manipulation via electric current. However, although models exist for some limiting cases, there is no universal theory capable of accurately describing the structure and energetics of all skyrmions. The main barrier is the complexity of non-local stray field interactions, which are usually included through crude approximations. Here we present an accurate analytical framework to treat isolated skyrmions in any material, assuming only a circularly-symmetric 360° domain wall profile and a homogeneous magnetization profile in the out-of-plane direction. We establish the first rigorous criteria to distinguish stray field from DMI skyrmions, resolving a major dispute in the community. We discover new phases, such as bi-stability, a phenomenon unknown in magnetism so far. We predict materials for sub-10 nm zero field room temperature stable skyrmions suitable for applications. Finally, we derive analytical equations to describe current-driven dynamics, find a topological damping, and show how to engineer materials in which compact skyrmions can be driven at velocities >1000 m/s.

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In this topical review, we will discuss recent advances in the field of skyrmionics (fundamental and applied aspects) mainly focusing on skyrmions that can be realized in thin film structures where an ultrathin ferromagnetic layer (<1 nm) is coupled to materials with large spin-orbit coupling. We review the basic topological nature of the skyrmion spin structure that can entail a stabilization due to the chiral exchange interaction present in many multilayer systems with structural inversion asymmetry. The static spin structures and the dynamics of the skyrmions are also discussed. In particular, we show that skyrmions can be displaced with high reliability and efficiency as needed for the use in devices. We discuss major possible applications, such as memory, microwave oscillators and logic, and combinations of these, making skyrmions very promising candidates for future low power IT devices.

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Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O 2− displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H + pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H + insertion at a Co/GdO x interface, with no degradation in magnetic properties after > 2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metalmetal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin-orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii-Moriya interaction, and spin-orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin-orbitronics.

During ultrafast demagnetization of a magnetically ordered solid, angular momentum has to be transferred between the spins, electrons, and phonons in the system on femto- and picosecond timescales. Although the intrinsic spin-transfer mechanisms are intensely debated, additional extrinsic mechanisms arising due to nanoscale heterogeneity have only recently entered the discussion. Here we use femtosecond X-ray pulses from a free-electron laser to study thin film samples with magnetic domain patterns. We observe an infrared-pump-induced change of the spin structure within the domain walls on the sub-picosecond timescale. This domain-topography-dependent contribution connects the intrinsic demagnetization process in each domain with spin-transport processes across the domain walls, demonstrating the importance of spin-dependent electron transport between differently magnetized regions as an ultrafast demagnetization channel. This pathway exists independent from structural inhomogeneities such as chemical interfaces, and gives rise to an ultrafast spatially varying response to optical pump pulses.