Electric field-controlled magnetization in bilayered magnetic films for magnetoelectric memory

Abstract

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“…They found that the magnetic anisotropy was enhanced, while the damping constant was decreased. Our previous work [12,13] investigated how the ME coupling between FeCo films and PMN-PT changed with the introduction of thin magnetic and non-magnetic layers between the film and the substrate. It was found that when thin Metglas (FeSiB) layers were used, that two different magnetisation hysteresis states were achieved at zero applied electric field, depending on whether a large positive or negative electric field was applied [13].…”

“…Our previous work [12,13] investigated how the ME coupling between FeCo films and PMN-PT changed with the introduction of thin magnetic and non-magnetic layers between the film and the substrate. It was found that when thin Metglas (FeSiB) layers were used, that two different magnetisation hysteresis states were achieved at zero applied electric field, depending on whether a large positive or negative electric field was applied [13]. For ultra-thin Ti sandwich layers, these layers change the texture within the FeCo films, which increased the switchability of the magnetisation of the FeCo film from ~70% for no Ti layer to ~95% for 8 nm Ti layer [12], thus showing that the morphology of the magnetostrictive layer is important in these structures.…”