Electrical signature of the defect associated with gate oxide breakdown

Zhang, W.D.; Zhang, J.F.; Zhao, Ce Zhou; Chang, Mo; Groeseneken, G.; Degraeve, R.

doi:10.1109/led.2006.873384

Cited by 23 publications

(17 citation statements)

References 16 publications

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“…As current leaks through the material, it leads to a runaway process that very rapidly results in damage to the material around the breakdown path, possibly through Joule heating [17]. The precise origin of trap generation remains the subject of debate, as does the nature of the traps which are responsible for the eventual breakdown [18]; impact ionization, hole injection, and trap creation involving atomic hydrogen are all possibilities [19].…”

Section: Introductionmentioning

confidence: 99%

Kinetics of nanopore fabrication during controlled breakdown of dielectric membranes in solution

et al. 2015

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Nanopore fabrication by controlled breakdown (CBD) overcomes many of the challenges of traditional nanofabrication techniques, by reliably forming solid-state nanopores sub-2 nm in size in a low-cost and scalable way for nucleic acid analysis applications. Herein, the breakdown kinetics of thin dielectric membranes immersed in a liquid environment are investigated in order to gain deeper insights into the mechanism of solid-state nanopore formation by high electric fields. For various fabrication conditions, we demonstrate that nanopore fabrication time is Weibull-distributed, in support of the hypothesis that the fabrication mechanism is a stochastic process governed by the probability of forming a connected path across the membrane (i.e. a weakest-link problem). Additionally, we explore the roles that various ions and solvents play in breakdown kinetics, revealing that asymmetric pH conditions across the membrane can significantly affect nanopore fabrication time for a given voltage polarity. These results, characterizing the stochasticity of the nanopore fabrication process and highlighting the parameters affecting it, should assist researchers interested in exploiting the potential of CBD for nanofluidic channel fabrication, while also offering guidance towards the conceivable manufacturing of solid-state nanopore-based technologies for DNA sequencing applications.

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Section: Introductionmentioning

confidence: 99%

Kinetics of nanopore fabrication during controlled breakdown of dielectric membranes in solution

et al. 2015

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“…Degradations have several sources: negative [4] and positive [5] bias temperature instability, hot carrier stresses [6], and oxide breakdown [5]. Negative Bias Temperature Instabilities (NBTI) generally leads to a shorter lifetime for pMOSFETs than that of nMOSFETs induced by hot carriers [7], and we concentrate on NBTI here.…”

Section: Introductionmentioning

confidence: 99%

New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation

Duan

Zhang

et al. 2013

IEEE Trans. Electron Devices

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Variability of nanometer-size devices is a major challenge for circuit design. Apart from the as-fabricated variability, the postfabrication degradation introduces a timedependent variability, originating from statistical distribution of charge location and number. The existing characterization techniques do not always capture the maximum degradation. Some of them does not separate the device-to-device variation from the charging fluctuation within the same device, either. The objective of this paper is to develop a new analysis method for characterizing time-dependent device-to-device variation, accounting for within-device fluctuation (TVF). The TVF captures the maximum degradation, separate device-to-device variation from withindevice fluctuation, and reduce the data points by three orders of magnitude. It is shown that the popular data acquisition at discrete time points does not capture the fluctuation well and drain current must be measured continuously. The TVF shows that degradation has two components-a fluctuation with time and one whose discharge is not observed under a given bias. Although both of them increase with stress time, the correlation between them is weak, indicating two different origins.

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“…This strong correlation supports that they originate from the same generation process. It is reported that the defects responsible for the intrinsic breakdown are the generated electron traps, rather than hole traps [23]. Hydrogenous species has been proposed to cause the generation [24] and one may speculate that the generated defect contains hydrogen.…”

Section: A Generated Defects (Gd): Characterization and Modellingmentioning

confidence: 99%