Electrical properties of Pr-doped Bi4Ti3O12 thin films on Si substrate

Yang, Chaodong; Zh, Wang; Jiang, Fuyi; Geng, Yujing; Zhu, Bo; Yi, Xiujie; Ma, Guangqiang; Han, Jin

doi:10.1016/j.jcrysgro.2004.07.049

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Cited by 9 publications

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“…However, SBT suffers from some disadvantages, such as very low switchable remanent polarization values and high processing temperatures. Very recent studies revealed that Bi 3+ ions in Bi 4 Ti 3 O 12 structure could be substituted by trivalent rare-earth ions, such as La 3+ , Sm 3+ , Pr 3+ , Eu 3+ and Nd 3+ , for the improvement of its electrical properties [3][4][5][6][7]. They are attractive lead-free materials for memories applications because they have large 2P r and high fatigue resistance on common Pt electrodes, which make them applicable to direct commercialization.…”

Section: Article In Pressmentioning

confidence: 99%