Electrical properties of Nd-substituted Bi4Ti3O12 thin films fabricated by chemical solution deposition

Control of morphology and orientation of grains in chemical-solution-deposited Bi3.15Nd0.85Ti3O12 thin films

“…However, it suffers a normally low remanent polarization P r and severe polarization suppression after $10 6 switching cycles. Therefore, Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT), as a member of rare-earth-cation-modified bismuth titanate, has recently attracted considerable attention due to its enhanced P r and improved fatigue endurance [6][7][8][9][10].…”

Microstructures and fatigue-free properties of the La3+ and Nd3+ doped Bi4Ti3O12 thin films prepared by modified sol-gel technique

“…The BNT capacitor was also characterized by a well-saturated P-E curve at an applied voltage of 12 V. The 2P r and 2E c derived from this curve were 44.2 μC/cm 2 and 296 kV/cm, respectively. This P r value was much larger than that of the BNT thin film fabricated by chemical solution deposition [10] . Moreover, the 2P r value of the BNT film was much larger than that of the BLT film, as illustrated in Figure 4(b).…”

“…Recent studies revealed that Bi 3+ ions in Bi 4 Ti 3 O 12 (BTO) could be substituted by trivalent lanthanide ions, such as La 3+ , Nd 3+ , Gd 3+ , Sm 3+ and Pr 3+ , resulting in improvement in the ferroelectric properties. Lanthanide-substituted BTO materials (Bi 4−x Ln x Ti 3 O 12 , BLnTO), such as Bi 4-x La x Ti 3 O 12 (BLT x ) [7] , Bi 4-x Nd x Ti 3 O 12 (BNT x ) [8][9][10] , Bi 3.25 Eu 0.75 Ti 3 O 12 [11] and Bi 4-x Sm x Ti 3 O 12 [12] , are promising lead-free materials for ferroelectric memory devices because of relative high spontaneous polarizations, good endurance to fatigue, and low coercive fields. Of these BLnTO materials, BLT x and BNT x have been receiving great attention.…”

Effects of film thickness on microstructure and properties of Bi3.15Nd0.85Ti3O12 thin films fabricated by chemical solution deposition

“…And it also allows the fabrication of uniform large area thin film and crystallization at a lower processing temperature. Recently, BNT films with excellent properties have been prepared by CSD in many research groups [14][15][16]. However, the thickness effects in BNT films fabricated by CSD have not been reported.…”