Electrical properties of polycrystalline silicon layers under solar illumination

Abstract

A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.

A temperature study of photosensitivity in SLS polycrystalline silicon TFTs

“…The influence of light on bulk polysilicon has been analyzed in the past, mainly for solar cells use [3][4][5][6][7]. However the interest on photoconductivity, in particular for poly-Si TFTs, has been revived during last years as indicated by the non-negligible number of published papers by different research groups.…”