A temperature study of photosensitivity in SLS polycrystalline silicon TFTs

Michalas, Loukas; Syntychaki, Anastasia; Koutsoureli, M.; Papaioannou, G.; Voutsas, Apostolos T.

doi:10.1016/j.microrel.2012.06.065

Cited by 2 publications

(3 citation statements)

References 22 publications

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“…To investigate this in more details, we measured I DS under illumination with different power density, the results are shown in figure 4(d), where both light 'on' and 'off' states are depicted. We can estimate the current in the 'on' state by using equation (4) [29]: where I on is the current under illumination and I dark (T) corresponds to the thermally activated current in the dark. I PC is the photo current and is a function of illumination intensity [30].…”

Section: Carrier Transportation Under Light Illuminationmentioning

confidence: 99%

Section: Carrier Transportation Under Light Illuminationmentioning

confidence: 99%

“…I PC is the photo current and is a function of illumination intensity [30]. Here, the photocurrent can be expressed as kψ, where ψ is the photon flux and k is a constant [29]. Therefore, the current under illumination consists of two parts: (1) TE and (2) photocurrent.…”

Section: Carrier Transportation Under Light Illuminationmentioning

confidence: 99%

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Schottky contact on ultra-thin silicon nanomembranes under light illumination

Cao

Feng

et al. 2014

Nanotechnology

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By repeating oxidation and subsequent wet chemical etching, we produced ultra-thin silicon nanomembranes down to 10 nm based on silicon-on-insulator structures in a controllable way. The electrical property of such silicon nanomembranes is highly influenced by their contacts with metal electrodes, in which Schottky barriers (SBs) can be tuned by light illumination due to the surface doping. Thermionic emission theory of carriers is applied to estimate the SB at the interface between metal electrodes and Si nanomembranes. Our work reveals that the Schottky contacts with Si nanomembranes can be influenced by external stimuli (like light luminescence or surface state) more heavily compared to those in the thicker ones, which implies that such ultra-thin-film devices could be of potential use in optical detectors.

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Section: Carrier Transportation Under Light Illuminationmentioning

confidence: 99%

Section: Carrier Transportation Under Light Illuminationmentioning

confidence: 99%