New relations for the polysilicon grain boundary (GB) potential barrier height (Ug) for both, the dark and light cases, are developed. The dependency of Ug on doping concentration (N), photogeneration (G), trap density (Nts), and the depth from surface (x), are discussed theoretically, along with the resulting minority carrier lifetime (τ), mobility (μ), and diffusion length (L). It is shown that Vg increases with depth and trap density, whereas the transport parameters decrease drastically under air‐mass number 1 (AM 1) illumination.
Abstract- In this paper, the performance of a self-powered unipolar gate driver supply circuit for power devices is studied, with the aim of analyzing the viability of using such circuits in high voltage applications with discrete components. A simplified model of the circuit, capturing the essential features, is proposed, from which practical design guidelines are provided to optimize the overall circuit performance. These design guidelines allow a proper component selection that can result in significant improvements in the circuit performance. Experimental results of typical parameters characterizing the turn-on and turn-off transients, including the turn-on and turnoff energy loss, are provided for a wide range of current values and different gate resistances. The results are compared to those obtained using a conventional gate driver power supply.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.