Electrical properties of layered copper oxyselenides (BiO)Cu1 − xSe and (Bi1 − xSrx)OCuSe

Ohtani, Toshio; Tachibana, Y.; Fujii, Yoshiko

doi:10.1016/s0925-8388(97)00375-7

Cited by 29 publications

(40 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The larger values of carrier concentration in selenium rich crystals of WS x Se 2-x obtained in Hall effect measurements at all temperatures starting from room temperature can be attributed to the lower values of resistivities in these crystals as compared to sulphur rich compounds of WS x Se 2-x . The decreasing tendency of R H with increasing temperature confirms that the samples are semiconductors rather than metals [32]. Also, the positive values of R H in all samples of WS x Se 2-x indicate that their nature is ptype with majority of charge carriers as holes.…”

Section: Discussionmentioning

confidence: 59%

Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique

Solanki¹,

Gujarathi²,

Deshpande³

et al. 2008

Cryst. Res. Technol.

View full text Add to dashboard Cite

The transport properties of ternary mixed WS x Se 2-x single crystals have been studied by measuring the thermo power, electrical conductivities and Hall parameters in a small temperature range 303-423 K. The electrical conductivity was highest for selenium rich WSe 2 and lowest for sulphur rich WS 2 crystals. All the crystals showed semiconducting behaviour from the temperature dependence of 'ρ', 'R H ' and 'S'. The Hall coefficients showed that the samples are p-type conducting. The temperature dependence of resistivity, Hall coefficients, carrier concentration showed that all of them are thermally activated. The values of activation energies, pre-exponential factors and the scattering parameters have been determined. The dominant scattering mechanism for the charge carriers has been explained. The relation between the TEP and the concentration of charge carriers and electrical conductivity was studied. The effective masses of holes and the effective density of states have been determined. These parameters show an increase with increase in sulphur content.

show abstract

Section: Discussionmentioning

confidence: 59%

Transport property measurements in tungsten sulphoselenide single crystals grown by a CVT technique

Solanki¹,

Gujarathi²,

Deshpande³

et al. 2008

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…Similar metal–insulator transition was also observed in ρ‐ T plots of some BiCuSeO bulk samples with Cu vacancies [see Supporting Information of Ref. ] . It might be caused by the disorder‐induced carrier localization effects due to the existence of Cu vacancies or other defects in the films .…”

Section: Resultsmentioning

confidence: 82%

Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Gao

Roussel

et al. 2016

J. Am. Ceram. Soc.

View full text Add to dashboard Cite

Single-phase, c-axis-oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. Xray diffraction pole figure confirms that the film does not have any ab-plane texture, whereas cross-sectional transmission electron microscopy shows good crystallinity of the film even if there exists an amorphous native oxide layer on the wafers surface. At room temperature, the resistivity of the film is about 14 mΩ cm, which is much lower than that reported for corresponding single crystals as well as polycrystalline bulks. This work demonstrates the possibility of using the available stateof-the-art silicon processing techniques to create BiCuSeObased thin-film thermoelectric devices.

show abstract

“…In contrast to the Co(2)-O shell in the rock-salt block, the Co(1)-O coordination in the CdI 2 -type layer shows sharply high static order and strong correlation to long-range magnetic ordering at low temperatures. Recently, a thermally-activated interlayer charge transfer (CT) process was reported in BiCu 1 À x OSe to result in a peak, which seems somewhat related to the hysteresis loop in a cycling ρ-T measurement [11,20,22], around 250 K in the ρ-T plot [31]. A similar temperature-dependent EXAFS cycling study is now in progress and may decipher such an unusual behaviour for BiCu 1 À x OSe.…”

Section: Resultsmentioning

confidence: 88%

“…The pristine BiCuOSe shows p-type semiconductivity with a narrow band gap, yet fair carrier concentration and mobility [4]. Rational chemical approaches such as aliovalent cation substitutions, introduction of Cu vacancies or replacement of Se with Te could effectively enhance the electrical conductivity [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. At the same time, thanks to the mixed heavy and light bands in the upper valence band, the Seebeck coefficient of heavily-doped BiCuOSe may remain decent.…”

Section: Introductionmentioning

confidence: 99%