Growth of <i>c</i>‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Wu, Xiaolin; Gao, Linjie; Roussel, Pascal; Dogheche, El Hadj; Wang, Jianglong; Fu, Guangsheng; Wang, Shufang

doi:10.1111/jace.14359

Cited by 12 publications

(6 citation statements)

References 32 publications

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“…The inset shows an example of the rocking curve for the film grown on MgO at T s = 573 K in the P Ar = 0.01 Torr case. In this sample, Δω was 1.8°, which was markedly larger than those reported for the nondoped BiCuSeO films: Δω = 0.56°on the Si wafer 26) and 0.2°on STO. 23) The larger Δω of the present films may originate from the Bi-site substitution for the Sr and=or lower growth temperature or nonstoichiometry of the Bi and Cu elements in the films.…”

Section: Methodscontrasting

confidence: 68%

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Ishizawa

Fujishiro

Naito

et al. 2018

Jpn. J. Appl. Phys.

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We have grown Bi 0.9 Sr 0.1 CuSeO epitaxial thin films on MgO and SrTiO 3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2 /ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s , and Bi and Cu deficiencies in the films.

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Section: Methodscontrasting

confidence: 68%

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Ishizawa

Fujishiro

Naito

et al. 2018

Jpn. J. Appl. Phys.

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“…Thin films pose certain advantages over their bulk counterparts such as layer and interface engineering, charge carrier concentration tuning, quantum confinement, and bandstructure tuning, which can be beneficial for enhancing zT. Few studies on BiCuSeO thin films prepared via pulse laser deposition (PLD) have been carried out, as discussed in section where the thin films were found to exhibit a higher power factor in the oriented BiCuSeO thin films compared to their bulk counterparts. , However, the study of the thin films’ structure, growth orientation, and thermoelectric properties is required in future work. Moreover, dedicated studies on developing both p- and n-type oxychalcogenide thin films using various techniques are required, including a more thorough investigation of their thermoelectric properties.…”

Section: Future Work and Conclusionmentioning

confidence: 99%

Oxychalcogenides as Thermoelectric Materials: An Overview

Tippireddy

Das

et al. 2021

ACS Appl. Energy Mater.

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Thermoelectric materials, which can convert heat into electricity and vice versa, have essential applications in power generation, thermocouples, sensors, and cooling. In the past decade, a lot of research has been devoted to developing various oxide-based thermoelectric materials, for mid- to high-temperature applications, ensuring robustness, long lifetimes, and low production costs. Among these oxide materials, one popular class is oxychalcogenides. A comprehensive discussion on the structural, electronic, and thermoelectric properties of both p-type and n-type oxychalcogenides is presented in this review article. The alternatively stacked conducting and insulating layers in these oxychalcogenides combined with a unique bonding network lead to interesting electronic properties and intrinsically low thermal conductivity. The article focuses primarily on Bi-based oxychalcogenides which have shown relatively good thermoelectric performance in the mid- to high-temperature range, with an elaborate discussion on n-type compositions. Several approaches such as chemical doping, modulation doping, introducing vacancies, band structure engineering, and so forth are summarized, vastly improving the zT in these materials and enabling their potential viability for thermoelectric applications. Finally, we discuss a few strategies as a future direction to further enhance the thermoelectric performance in these oxychalcogenide materials.

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“…[47][48][49] Its low-dimensional nanostructures have been investigated by solvothermal method, pulsed laser deposition, and chemical vapor deposition. [50][51][52] Nevertheless, they are hard to be directly integrated into optical fibers.…”

Section: Introductionmentioning

confidence: 99%

Low Threshold and Robust Ultrafast Pulses from Freestanding‐Growth 2D Quaternary BiCuSeO

Yu,

Li,

et al. 2023

Adv Funct Materials

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Saturable absorber is a key component in ultrafast pulsed laser systems, which are pivotal in ultrafast physics, high‐speed communication, etc. 2D materials appear to be superior candidates as saturable absorbers for compact pulsed fiber lasers in recent years due to their wide band response and ease of integration. However, the integration of mode‐locked devices inevitably involves contamination or polymer in the interface between the layered saturable absorber and the fiber, which contributes to a high start‐up threshold for the ultrafast pulsed lasers. This study develops an on‐fiber femtosecond laser with 2D narrow‐gap semiconducting BiCuSeO as a saturable absorber by a fully dry integration process thanks to the controllable growth of freestanding quaternary BiCuSeO nanoflakes. The corresponding thermodynamic growth mechanism is systemically revealed by electron microscopy and bind‐energy calculation. An electrostatic‐force‐assisted transfer method is developed to avoid damage or chemical contamination. The BiCuSeO‐based femtosecond laser shows decent output performance (pulse width, signal‐noise ratio and repetition rate are 395 fs, 61 dB, 17.1 MHz) with an ultra‐low threshold of 30 mW. The strategy of controllable growth of free‐standing 2D material facilitates a clean interface between the saturable absorber and fibers, which is favorable for high‐performance ultrafast photonic devices.

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Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Cited by 12 publications

References 32 publications

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Oxychalcogenides as Thermoelectric Materials: An Overview

Low Threshold and Robust Ultrafast Pulses from Freestanding‐Growth 2D Quaternary BiCuSeO

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Growth of c‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers

Cited by 12 publications

References 32 publications

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

Crystal orientation, crystallinity, and thermoelectric properties of Bi0.9Sr0.1CuSeO epitaxial films grown by pulsed laser deposition

Oxychalcogenides as Thermoelectric Materials: An Overview

Low Threshold and Robust Ultrafast Pulses from Freestanding‐Growth 2D Quaternary BiCuSeO

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Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition