Crystal orientation, crystallinity, and thermoelectric properties of Bi_0.9Sr_0.1CuSeO epitaxial films grown by pulsed laser deposition

Abstract

We have grown Bi 0.9 Sr 0.1 CuSeO epitaxial thin films on MgO and SrTiO 3 (STO) single-crystal substrates by pulsed laser deposition (PLD) under various growth conditions, and investigated the crystal orientation, crystallinity, chemical composition, and thermoelectric properties of the films. The optimization of the growth conditions was realized in the film grown on MgO at the temperature T s = 573 K and Ar pressure P Ar = 0.01 Torr in this study, in which there was no misalignment apart from the c-axis and no impurity phase. It was clearly found that the higher crystal orientation of the epitaxial film grown at a higher temperature under a lower Ar pressure mainly enhanced the thermoelectric power factor P (= S 2 /ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity. However, the thermoelectric properties of the films were lower than those of polycrystalline bulk because of lattice distortion from lattice mismatch, a low crystallinity caused by a lower T s , and Bi and Cu deficiencies in the films.

Extrinsic and intrinsic p-type doping of pulsed laser deposited few-layer WS2 films

“…PLD is characterized by mono and few-layer thickness control 1 , as well as the ability to grow directly onto device substrates at relatively low temperatures 2 . The capability of PLD for congruent evaporation and producing epitaxial, stoichiometric films with complex compositions has been reported e.g., [3][4][5] .…”