Electrical Properties of Al₂O₃/ZnO Metal–Insulator–Semiconductor Capacitors

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

“…Compared with the S1 sample, optimized C-V characteristics have been observed in the sample with the passivated layer, including a significant increase of capacitance in the accumulation region and a reduction in the hysteresis and stretching phenomena, revealing that a passivation layer of Al 2 O 3 passivated layer significantly suppresses the generation of low-k interfacial layers, thus weakening the interfacial Fermi pinning effect. In particular, compared with samples S2 and S4, the capacitance of the accumulation region of sample S3 is more saturated and the hysteresis is smaller, and sample S3 has the best electrical properties, which suggests that the passivation treatment has effectively controlled the interfacial trap density and slow interface states density [19]. As shown in Table 3, some important electrical parameters extracted from the C-V curves can help us in the quantitative analysis of the electrical properties of the silicon-based MOS capacitors.…”

“…Among these candidates, rare earth oxides have gained attention due to their high dielectric constant and large band gap. Er 2 O 3 , as a classic rare earth oxide, is one of the most promising gate dielectrics to replace SiO 2 for its large band gap (5.8 eV), large valence band offset (3.5 eV), suitable high-k value (8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) [9], and good chemical stability when in contact with Si substrates. Moreover, Er 2 O 3 remains amorphous when annealed at 700 • C, and its good thermal stability reduces the formation of silicide and surface roughness [10].…”