Electrical characterization of the Si substrate in magnetically enhanced or conventional reactive-ion-etch-exposed SiO/sub 2//p-Si structures

Abstract

In this study we explore the silicon substrate damage produced by CI 2-and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline Si / SiO, [ single-crystal Si structures. The damage-caused traps, examined by means of deep-level transient spectroscopy, in the p-type Si are found to have concentrations that can exceed one tenth that of the boron dopant, and are detectable as far as -10 pm from the SiO, / Si interface. The concentration and depth of these traps are shown to depend on the polycrystalline Si overetch selectivity, initial oxide thickness, and on the magnetic field strength as well as the presence of hydrogen.

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

“…where E max and E min are the maximum and minimum energies in the IEDF spectrum, respectively. This feature has been verified using various techniques such as PRS, 103) 1/C 2 -V, 89) and SIMS. 117) Recently, the energy dependence under a high-energy ion irradiation condition was reported, 123) where the IEDF effect on d dam becomes observable.…”

“…Electrical techniques for PID analyses are categorized into two types; (1) the characterizations of time-zero initial performance and (2) reliability lifetime. The typical initial characterization methods are current-voltage (I-V ), 38,[84][85][86] capacitance-voltage (C-V ), 14,37,87) contact resistance, 38,88) deep-level transient spectroscopy, 89,90) and photo-current conduction. 91,92) The time evolutions of leakage current 38) or applied voltage are evaluated in the reliability lifetime measurements.…”

“…It was discussed that this statistical effect is valid under the conditions of E ion < 500 eV 117) and plasma density >10 10 cm −3 , which correspond to the present-day plasma etching conditions. 89) The weak energy dependence of PPD is described in terms of the defect profile along the depth x, n dam (x) as…”

“…16(a) and 16(c). For the assessment of PPD to Si substrates, Nakakubo et al employ C-V measurement 89) and found the capacitance in depletion/inversion exhibits a characteristic behavior, implying the presence of donor like defects after Ar plasma exposure. They quantified n dam from the depletion/inversion capacitance change by assuming that the defects play a role as carrier trapping and detrapping site and induce the change in dopant concentration.…”

Characterization of Plasma Process-Induced Latent Defects in Surface and Interface Layer of Si Substrate

“…Regarding defect sites created by PPD, electrical measurements have been widely performed. [28][29][30][31][32][33] Among them, a C-V technique has been primarily proposed 34 to probe the density (n dam ) in damaged structures. Historically, there have been many studies conducted so far using C-V techniques in ion-implantation or other processes [35][36][37] for the purpose of quantifying dopant density.…”