Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique

“…The check of superficial residual defects or bulk contamination is usually made by the lifetime generation-recombination technique. There are many methods employed for such purpose (the most used are for example deep level transient spectroscopy (DLTS) [1] or Zerbst method [2]) all based on capacitance transient analysis. Less usual is analyzing the lifetime of the minority carrier by current transient technique.…”