Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

Abstract

Plasma processing plays an important role in manufacturing leading-edge electronic devices such as ULSI circuits. Reactive ion etching achieves fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). In contrast, it has been pointed out over the last four decades that plasma processes not only modify the surface morphology of materials but also degrade the performance and reliability of MOSFETs as a result of defect generation in materials such as crystalline Si substrate and dielectric films. This negative aspect of plasma processing is defined as plasma (process)-induced damage (PID) which is categorized mainly into three mechanisms, i.e. physical, electrical, and photon-irradiation interactions. This article briefly discusses the modeling of PID and provides historical overviews of the characterization techniques of PID, in particular, by the physical interactions, i.e. ion bombardment damage.

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

“…71) In addition, the structures and functions were controlled, and material damage could be minimized. 79) To satisfy the requirements for controlling the feature profiles and reducing damage, all levels of the plasma, sheath, and surface reactions were characterized by quantitative measurements.…”

In situ electrical monitoring of SiO2/Si structures in low-temperature plasma using impedance spectroscopy

“…The electrical properties of dielectric films modified through plasma exposure have been extensively investigated using ex situ measurement methods in terms of plasma processinduced damage. [13][14][15][16] DC-based current-voltage (I-V ) measurements have analyzed defect formation in dielectric films by comparing I-V curves before and after plasma exposure. [17][18][19] AC-based capacitance-voltage (C-V ) measurements for metalinsulator-semiconductor structures have analyzed accumulated charges trapped in the defects and dielectric-constant variations.…”

Atomic layer etching of silicon nitride film by oxygen gas cluster ion beam with acetylacetone

“…Therefore, dry etching of the freestanding SiN x membrane is effective for ultra-thinning. However, plasma irradiation may cause degradation to the mechanical properties by plasma-induced damage (PID) 9,10) to the SiN x film. This may reduce the pressure resistance (>1 atm) for liquids enclosed in UHV.…”

“…However, irradiation damage to SiN x film due to PID is unavoidable. 9,10) The gas cluster ion beam (GCIB) [27][28][29] is one of the most suitable techniques for the removal of the reaction layer. A GCIB is comprised of aggregates of several thousands of atoms, and the energy of the individual atoms in the GCIB can easily drop to several eV/atom with an acceleration voltage of several kV.…”