Electrical characterization of SOI substrates incorporating WSi/sub x/ ground planes

Abstract

Silicon-on-insulator (SOI) substrates incorporating tungsten silicide ground planes (GPs) have been shown to offer the lowest reported crosstalk figure of merit for application in mixed signal integrated circuits. The inclusion of the silicide layer in the structure may lead to stress or defects in the overlying SOI layers and resultant degradation of device performance. It is therefore essential to establish the quality of the silicon on the GPSOI substrate. MOS capacitor structures have been employed in this paper to characterize these GPSOI substrates for the first time. High quality MOS capacitor characteristics have been achieved with minority carrier lifetime of 0 8 ms. These results show that the substrate is suitable for device manufacture with no degradation in the silicon due to stress or metallic contamination resulting from the inclusion of the underlying silicide layer.

Low Temperature Bonding of PECVD Silicon Dioxide Layers

“…SOI technologies allow improvements in a wide area of applications such as in circuit performance and multi-layer (3D) integration (1). For RF applications, improved performance can be obtained using high resistivity substrates or by incorporating buried layers such as LPCVD polysilicon or WSi (2,3). One method of improving RF performance would be to transfer the circuit from the original substrate to a second substrate such as glass or sapphire.…”