Review of SiGe HBTs on SOI

Mitrović, Ivona Z.; Buiu, O.; Hall, S.; Bagnall, Darren M.; Ashburn, P.

doi:10.1016/j.sse.2005.07.020

Cited by 26 publications

(9 citation statements)

References 54 publications

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“…Selective epitaxial growth (SEG) of Ge and SiGe has become increasingly important in a variety of advanced applications, including high-speed heterojunction bipolar transistors [1][2][3] and metal oxide field-effect transistors [4][5][6][7]. Other applications include ordered arrays of quantum dots [8][9][10][11][12] for photodetectors [13] and quantum cellular automata [14].…”

Section: Introductionmentioning

confidence: 99%

Energetics of Ge nucleation on SiO2 and implications for selective epitaxial growth

Leonhardt

Han

2009

Surface Science

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Section: Introductionmentioning

confidence: 99%

Energetics of Ge nucleation on SiO2 and implications for selective epitaxial growth

Leonhardt

Han

2009

Surface Science

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“…The future SiGe HBTs may have to be integrated with SOI fully-depleted CMOS [1] with Si top-layers of about 100 nm or less. In this case, the collector design is the key issue.…”

Section: A Potentials For Hf Sige Hbt Fabricationmentioning

confidence: 99%

“…The solutions that have found their way to production are mainly combinations of high-resistivity Si and silicon-on-insulator (SOI) substrates [1], [2]. In particular, RF SOI CMOS is challenging the frequency territory of BiCMOS processes.…”

mentioning

confidence: 99%

Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling

Nanver

Schellevis

Scholtes

et al. 2009

IEEE J. Solid-State Circuits

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Abstract-This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted Silicon-On-Glass (SOG) Substrate-Transfer Technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the resistive/capacitive parasitics of the silicon devices can be minimized by a direct two-sided contacting. Focus is placed here on the improved device performance that can be achieved. In particular, high-quality SOG varactors have been developed and an overview is given of a number of innovative highly-linear circuit configurations that have successfully made use of the special device properties. A high flexibility in device design is achieved by two-sided contacting because it eliminates the need for buried layers. This aspect has enabled the implementation of varactors with special 2 doping profiles and a straightforward integration of complementary bipolar devices. For the latter, the integration of AlN heatspreaders has been essential for achieving effective circuit cooling. Moreover, the use of Schottky collector contacts is highlighted also with respect to the potential benefits for the speed of SiGe heterojunction bipolar transistors (HBTs).

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“…[132,131] The BOX layer provides robust vertical isolation from the substrate. Standard LOCOS (Local Oxidation of Silicon) or STI (Shallow Trench Isolation) processes are employed to provide lateral isolation from adjacent devices.…”

Section: Introductionmentioning

confidence: 99%