Low Temperature Bonding of PECVD Silicon Dioxide Layers

Baine, Paul; Bain, Michael; McNeill, David; Gamble, Harold; Armstrong, Mervyn

doi:10.1149/1.2357066

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…The silicon dioxide layers were deposited by plasma enhanced chemical vapor deposition (PECVD) at a temperature of 300 o C. Prior to bonding the PECVD layer is densified at 600 o C. This prevents out-gassing from the layer after bonding (12). In order to achieve a bondable surface the PECVD layer is polished using a silicon removal CMP process (13). The amorphous silicon layer was deposited by low pressure chemical vapor deposition (LPCVD) at a temperature of 540 o C in 100% Silane.…”

Section: Experimental and Resultsmentioning

confidence: 99%

Germanium Bonding to AL2O3

et al. 2008

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Germanium has been bonded to both single crystal Al2O3 (sapphire) as well as fine grain Al2O3. A germanium to sapphire bonding energy of 3 J/m2 has been measured after a 200 oC bond anneal. Micro voids formed between the germanium/sapphire interface can be removed by employing an interfacial layer of silicon dioxide on either surface. Patterning the sapphire into a grid pattern prior to bonding creates an escape path for trapped gas or moisture allowing micro void free direct bonding to be achieved. Modifying the surface of the fine grain Al2O3 surface with a polycrystalline silicon deposition and polish creates a surface, having an rms roughness of 1.5nm(measured over a 250µm square area), suitable for bonding. Techniques employed in the germanium sapphire bonding can then be used in the bonding of fine grain Al2O3 to germanium.

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Section: Experimental and Resultsmentioning

confidence: 99%

Germanium Bonding to AL2O3

et al. 2008

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Wafer-level plasma activated bonding: new technology for MEMS fabrication

et al. 2007

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Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stress-free, aligned substrates without warpage. Achieving wafer level bonding at low temperature employs a little magic and requires new technology development. The cornerstone of low temperature bonding is plasma activation. The plasma is chosen to compliment existing interface conditions and can result in conductive or insulating interfaces. A wide range of materials including semiconductors, glasses, quartz and even plastics respond favorably to plasma activated bonding. The annealing temperatures required to create permanent bonds are typically ranging from room temperature to 400°C for process times ranging from 15-30 min and up to 2-3 h. This new technique enables integration of various materials combinations coming from different production lines.

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