Electrical characterization of field-enhanced poly-Si nanowire SONOS memory

Thin Layers of Oxide Coating in Very-Large-Scale Integration

“…Lowering the temperature of nitriding or reducing its length leads to decreasing the effects. Dependence of states density, caused by radiation, from the gate surface: for pure oxide (1) and for nitrated one at 1100°С for 60s (2).…”

“…Modern VLSI circuits contain a large number of elements on a crystal. The progress in increasing the degree of integration is achieved by enlarging the crystal surface area, however, the most efficient way is raising the packing density of elements on a crystal, decreasing the size of components [1][2][3]. These processes are limited by the problems of providing high microelectronic reliability and sufficient percentage yield of production.…”

Potential barrier height at the grain boundaries of a poly-silicon nanowire

“…Substituting the electric field and interface state density from Eq. 10 and 7 we obtain: Finally, we can see the potential barrier height at the GB for electrons is given by: (13) In the second case (R>Rc), the traps are saturated and the sphere is not fully depleted.…”

“…Recently, a low cost, top-down approach of poly-crystalline silicon nanowires (P-SiNWs) synthesis was demonstrated, using a classical fabrication method commonly used in microelectronic industry -the socalled sidewall spacer technique. [11,12,13,14] This top-down approach was previously demonstrated as a good method for biosensor fabrication for several analytes, all in which, a detection limit of femto-molar (fM) level was observed. [15,1,16,17] The main di↵erence between single crystalline silicon (SC-Si) and poly crystalline silicon (PC-Si) is charge trapping at Grain Boundaries (GBs) in the latter.…”

“…A disadvantage of the top-down approach is that the use of high-quality silicon-on-insulator wafers results in a costly production process, unsuitable for disposable sensor production. Recently, a low-cost, top-down approach of poly-crystalline silicon nanowire (P-SiNW) synthesis was demonstrated, using a classical fabrication method commonly used in the microelectronic industry-the so-called sidewall spacer technique [11][12][13][14]. This top-down approach was previously demonstrated as a good method for biosensor fabrication for several analytes, all in which, a detection limit of femto-molar (fM) level was observed [1,[15][16][17].…”