Thin Layers of Oxide Coating in Very-Large-Scale Integration

Abstract

Scaling of very-large-scale integration (VLSI) circuits develops in the direction of increasing the surface of a crystal, packing density of elements on crystals, and miniaturization of components. These processes are limited by the necessity to provide high microelectronic reliability and sufficient percentage yield. For this reason, it is important to study the characteristics of thin oxide coating, as well as to investigate the degradation processes of metal oxide semiconductor (MOS) structures, made via nitriding gate oxide with the exposure to hot electrons and ionizing radiation.