Electrical Characterization of Cu/Cu2O Electrodeposited Contacts

Abstract

The objective of this work was to investigate the electrical properties of electrodeposited Cu/Cu2O interfaces in dark conditions. Cuprous oxide is a p-type semiconductor with application in various devices as metal base transistors, and it is very important to obtain good ohmic contacts to this electronic material. The Cu/Cu2O structures were prepared from a single bath on Si substrates by electing a specific potential for each electrodeposited layer. The electrical characterization allowed the formation of reproducible interfaces with contact resistances of 2.1 MΩ/cm2 and the determination of the resistivity of the semiconductor oxide at values of 2 x 1010 Ω.cm.

3D-printed Cu2O photoelectrodes for photoelectrochemical water splitting

“…2b ). 38 This led to an accelerated transfer of electrons (and holes) under the electric field, improving the PEC performance of the photoelectrode. 39 Fig.…”

Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O

“…56 The measured resistivity of about 10 8 X cm at RT is usually reported in the literature for electrodeposited Cu 2 O. [18][19][20][21][22] However, by doping with Bi, a reduction in resistivity of about 4 orders of magnitude at 230 K and 2 orders of magnitude at 300 K is achieved. The electrical resistivity decrease is even higher if we considered that the resistivity of the undoped sample grown at pH 9.0 would have a higher resistivity than the sample shown in Fig.…”

“…The electrical resistivity of electrodeposited Cu 2 O films can reach too high values such as 10 8 X cm (Refs. [18][19][20][21][22] that are detrimental to developing semiconductor devices with high efficiency. 23 A low fill factor (FF) has been obtained in electrodeposited p-n homojunction Cu 2 O solar cells, 21,[24][25][26][27] and the main cause is the high series resistance of the cell.…”