2017
DOI: 10.1007/s10008-017-3660-x
|View full text |Cite
|
Sign up to set email alerts
|

Electrodeposition of Cu2O: growth, properties, and applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

3
48
0
2

Year Published

2017
2017
2023
2023

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 75 publications
(62 citation statements)
references
References 179 publications
3
48
0
2
Order By: Relevance
“…The resistivity data was fitted with Arrhenius equation and the activation energy is estimated to be 0.15 eV (supporting Figure S9). The activation energy is in good agreement with the reported values . The carrier concentration is increasing with the temperature within the range of 10 16 to 10 18 cm −3 .…”
Section: Electrical Properties Of Cu2o Synthesised Via Different Metsupporting
confidence: 89%
See 2 more Smart Citations
“…The resistivity data was fitted with Arrhenius equation and the activation energy is estimated to be 0.15 eV (supporting Figure S9). The activation energy is in good agreement with the reported values . The carrier concentration is increasing with the temperature within the range of 10 16 to 10 18 cm −3 .…”
Section: Electrical Properties Of Cu2o Synthesised Via Different Metsupporting
confidence: 89%
“…The activation energy is in good agreement with the reported values. [19,35] The carrier concentration is increasing with the temperature within the range of 10 16 to 10 18 cm À3 . The value at room temperature is similar to the earlier reports, where carrier concentration is measured via Mott-Scottky analysis.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…Besides their outstanding properties, they can be easily deposited by low-cost, solution-based methods. Methods like spray pyrolysis, chemical bath deposition and electrodeposition are very attractive, because they can be integrated in high-throughput manufacturing and often yield film qualities comparable to films deposited by vacuumbased methods [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%
“…The material has a band gap of * 2 eV [15], which means that a maximum efficiency of 20% [16] (Shockley-Queisser limit) can be achieved. Cu 2 O is mainly prepared by Cu sheet oxidation at high temperatures ([ 1000°C) [17][18][19][20] and by electrochemical deposition (ECD) at temperatures well below 100°C [7,8,[21][22][23][24]. The first method is particularly energy-intensive, but delivers high power conversion efficiencies, with the current record being 8.1% [17].…”
Section: Introductionmentioning
confidence: 99%