Cuprous oxide (Cu2O) films from 25 nm to 1500 nm were electrodeposited on n-Si(100) and Ni/n-Si(100) substrates from aqueous solution at room temperature. X-ray diffraction and transmission electron microscopy imaging show that the Cu2O structure and morphology is strongly affected by the substrate choice, with V shape and U shape columnar growth on n-Si(100) and Ni/n-Si(100), respectively. Atomic force microscopy reveals the presence of rounded grains at the surface in both cases. Anomalous and normal roughening are observed in films grown on n-Si and Ni, respectively, but estimates of scaling exponents are not conclusive. On the other hand, the distributions of local heights, roughness, and extremal heights show good agreement with those of the fourth order linear stochastic equation of Mullins and Herring (MH). Thus, surface dynamics in both systems is dominated by diffusion of adsorbed molecules, with no large scale effect of possible inhomogeneities in mass flux from the solution or in reaction and adsorption rates. In growth on n-Si substrates, the noise amplitude of the MH equation increases in time as t 0.8 , while the coefficient of the curvaturerelated term is time-independent.Step edge energy barriers restrict the mass flux across grain boundaries, thus a broad size distribution of initial grains leads to coarsening of the larger ones. This explains their V shape in the thickest films and establishes a connection with the anomalous roughening. These effects are reduced in films grown on Ni/n-Si, which initially have much larger grains with narrower size distributions and, consequently, smaller fluctuations in coarse grained growth rates. Thus, despite the relevance of electrochemical conditions for Cu2O films to grow and their influence on crystallographic orientation, large scale surface features are determined by physical properties of the material and its interactions with the substrate, with a universal microscopic dynamics similar to vapor deposition. arXiv:1509.04787v1 [cond-mat.mtrl-sci] 16 Sep 2015
In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ∼40% observed for a low emitter current value of 2 mA.
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The objective of this work was to investigate the electrical properties of electrodeposited Cu/Cu2O interfaces in dark conditions. Cuprous oxide is a p-type semiconductor with application in various devices as metal base transistors, and it is very important to obtain good ohmic contacts to this electronic material. The Cu/Cu2O structures were prepared from a single bath on Si substrates by electing a specific potential for each electrodeposited layer. The electrical characterization allowed the formation of reproducible interfaces with contact resistances of 2.1 MΩ/cm2 and the determination of the resistivity of the semiconductor oxide at values of 2 x 1010 Ω.cm.
The electrodeposition of p-Cu2O layers on Co/p-Si planar structures for potential application as p/metal/p metal base transistors were investigated. The deposits were prepared from electrolytes containing lactic acid and copper sulphate and characterized by Rutherford Backscattering Spectrometry (RBS), X - Ray Diffraction (XRD), and Transmission Electron Microscopy (TEM). The formation of Cu2O/Co Schottky interfaces was confirmed by electrical measurements.
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