Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Campabadal, F.; Rafı́, J.M.; Zabala, M.; Beldarrain, O.; Faigon, A.; Castán, Helena; Gómez, Alfonso; García, Héctor; Dueñas, S.

doi:10.1116/1.3532544

Cited by 46 publications

(23 citation statements)

References 30 publications

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“…This technique allows the deposition of very thin layers by sequential selfterminating gas-solid reactions (Campabadal et al, 2011;Hausmann and Gordon, 2003). The sample structures were made on 100 mm diameter oriented p-type silicon wafers (1 0 0), with a resistivity of 4-40 cm.…”

Section: Substrate Fabricationmentioning

confidence: 99%

“…The sample structures were made on 100 mm diameter oriented p-type silicon wafers (1 0 0), with a resistivity of 4-40 cm. We have used the Savannah-200 ALD system set up at IMB-CNM (Campabadal et al, 2011), which consists of a thermal ALD system at a controlled temperature and under vacuum. The system uses deionized H 2 O as the oxygen precursor, together with tetrakis(dimethylamido)-hafnium for HfO 2 deposition and N 2 as the carrier/purging gas.…”

Section: Substrate Fabricationmentioning

confidence: 99%

“…However, some inherent disadvantages reduce its effectiveness for passivation, and its high permeability toward water and other impurities (Chu et al, 1967). To overcome these problems, the use of other insulators has a larger permittivity and is more thermodynamically stable in contact with a silicon like aluminum oxide (Al 2 O 3 ), tantalum pentoxide (Ta 2 O 5 ), titanium dioxide (TiO 2 ), or zirconium dioxide (ZrO 2 ), and hafnium dioxide (HfO 2 ) is necessary to obtain a stable sensor (Campabadal et al, 2011;Park et al, 2010). These important properties can favor the development of bio/chemical sensors; for example, improved thermal stability creates a good interface for electrical performance.…”

Section: Introductionmentioning

confidence: 99%

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Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO2/SiO2/Si for detection of perchlorate

Braik

Dridi

Ali

et al. 2015

J. Sens. Sens. Syst.

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Abstract. We report the development of a chemical sensor based on a Co(II) phthalocyanine acrylate polymer (Co(II)Pc-AP) for perchlorate anion detection. We have used two types of transducers, silicon nitride (Si 3 N 4 ) and hafnium oxide (HfO 2 ). The adhesion of the Co(II)Pc-AP on different transducers and their surface qualities have been studied by contact angle measurements. We have studied the pH effect on Al/Si/SiO 2 /HfO 2 /electrolyte capacitance values for different phosphate buffer solutions (PBS). This optimization step has allowed a sensitivity value of about 44 mV decade −1 towards H + ions. The fabricated sensors based on Si 3 N 4 and HfO 2 transducers functionalized with a Co(II)Pc-AP membrane have been characterized by C(V) measurements for different perchlorate concentrations (from 10 −7 to 10 −2 M). The sensor developed with the HfO 2 transducer shows better performances compared to that based on Si 3 N 4 : a larger detection range (10 −7 to 10 −2 and 10 −3 to 10 −2 M, respectively) and lower detection limits (10 −7 and 10 −3 M). The specificities of our perchlorate sensor have been tested for some interfering ions (nitrate, sulfate and carbonate).

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Section: Substrate Fabricationmentioning

confidence: 99%

Section: Substrate Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO2/SiO2/Si for detection of perchlorate

Braik

Dridi

Ali

et al. 2015

J. Sens. Sens. Syst.

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“…Nevertheless, there is a trade-off between the dielectric constant and the insulator's critical electric field. For example, the critical electric field for SiO 2 is around 10 MV/cm while for HfO 2 is typically 2-3 MV/cm [25]. This is a detrimental factor for the use of HfO 2 if positive gate voltages are desired.…”

Section: Threshold Voltagementioning

confidence: 97%

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Pérez‐Tomás

Fontserè

Jennings

et al. 2013

Materials Science in Semiconductor Processing

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“…24 The estimated equivalent oxide thickness (EOT) yields a relative dielectric constant j ¼ 7.4. 25 A SiO x interfacial layer (IL) was frequently reported as a sub-product of ALD layers growth on Si. 7, 26 We could not detect its presence through microscopy, neither through kinetics analysis.…”

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confidence: 99%

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Salomone

Kasulin

Lipovetzky

et al. 2014

Journal of Applied Physics

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Articles you may be interested inAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant J. Vac. Sci. Technol. B 31, 01A101 (2013); 10.1116/1.4766182Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs

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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Cited by 46 publications

References 30 publications

Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO<sub>2</sub>/SiO<sub>2</sub>/Si for detection of perchlorate

Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO<sub>2</sub>/SiO<sub>2</sub>/Si for detection of perchlorate

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Cited by 46 publications

References 30 publications

Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO&lt;sub&gt;2&lt;/sub&gt;/SiO&lt;sub&gt;2&lt;/sub&gt;/Si for detection of perchlorate

Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO&lt;sub&gt;2&lt;/sub&gt;/SiO&lt;sub&gt;2&lt;/sub&gt;/Si for detection of perchlorate

Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

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Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO<sub>2</sub>/SiO<sub>2</sub>/Si for detection of perchlorate

Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO<sub>2</sub>/SiO<sub>2</sub>/Si for detection of perchlorate