Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Abstract

Articles you may be interested inAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant J. Vac. Sci. Technol. B 31, 01A101 (2013); 10.1116/1.4766182Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs

Total dose effect of Al2O3-based metal–oxide–semiconductor structures and its mechanism under gamma-ray irradiation

“…This may be due to a SiO x interfacial layer which was frequently reported as a byproduct of layer growth via ALD on a Si substrate [18][19][20].…”

Switching Characteristics and High-Temperature Dielectric Relaxation Behaviours of Pb(Zn1/3Nb2/3)0.91Ti0.09O3 Single Crystal

“…Some oxides and complex oxides, such as TiO 2− x , ZnO 2 , NiO, TaO x , SrTiO 3 , Pr 0.7 Ca 0.3 MnO 3 , etc. [4,5,6,7,8,9,10,11,12,13,14,15], which have resistance switching characteristics, are under intense investigation due to their potential application in next-generation non-volatile memory [2,16]. In addition, the application of multiferroic materials has also gained great attention in resistance switching [17,18].…”