Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Pérez‐Tomás, Amador; Fontserè, A.; Jennings, Michael R.; Gammon, P. M.

doi:10.1016/j.mssp.2012.10.014

Cited by 25 publications

(14 citation statements)

References 50 publications

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“…Transparent insulating oxides (TIOs) usually are the platform of choice for defining the insulation layers (either gate or passivation -e.g. SiO 2 , Al 2 O 3 , HfO 2 ) [63] , [64] , [65] in several semiconductor industries (i.e. silicon, SiC or GaN) [66] , [67] and insulating oxides are also ubiquitous as electronic substrates (sapphire, Ga 2 O 3 ) [68] , [69] , optoelectronic transparent substrates (soda-lime and borosilicate glasses, sapphire, YSZ) and optical lenses.…”

Section: Oxide Resistivitymentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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New device concepts and new computing principles are needed to balance our ever-growing appetite for data and information with the realization of the goals of increased energy efficiency, reduction in CO 2 emissions and the circular economy. Neuromorphic or synaptic electronics is an emerging field of research aiming to overcome the current computer's Von-Neumann bottleneck by building artificial neuronal systems to mimic the extremely energy efficient biological synapses. The introduction of photovoltaic and/or photonic aspects into these neuromorphic architectures will produce self-powered adaptive electronics but may also open up new possibilities in artificial neuroscience, artificial neural communications, sensing and machine learning which would enable, in turn, a new era for computational systems owing to the possibility of attaining high bandwidths with much reduced power consumption. This perspective is focused on recent progress in the implementation of functional oxide thinfilms into photovoltaic and neuromorphic applications towards the envisioned goal of selfpowered photovoltaic neuromorphic systems or a solar brain.

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Section: Oxide Resistivitymentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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“…GaN HEMTs are becoming an important device for mid-power range (600-1200 V) in applications such as the photovoltaic DC-AC power inverter. There, the gate oxide involves either an in-situ passivation such as in the formation of SiN or the deposition of a high-k (wide bandgap) oxide layer such as Al 2 O 3 or HfO 2 [40], [41]. For both MOSFET and HEMT configurations [42], a functional WBG oxide improves device functionalities, breaking the Boltzman limit for the transconductance and improving the switching speed of transistors by a negative capacitance effect [43], [44].…”

Section: Mosfet Hemtmentioning

confidence: 99%

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

Pérez‐Tomás

Chikoidze

Jennings

et al. 2018

Oxide-Based Materials and Devices IX

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Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β-Ga 2 O 3 , which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things.

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“…When an insulator is placed between the gate metal and semiconductor, i.e., metal-insulator-semiconductor field-effect transistor, an electric field generated by the gate voltage is strongly formed in the insulator having a large resistance, such that the input impedance becomes very large and the gate leakage current can be reduced. Gate leakage current in GaN-based HEMTs can be reduced using structures similar to metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), where high-k materials, such as Si 3 N 4 and Al 2 O 3 , are deposited under the gate metal [11][12][13][14][15][16][17][18]. MIS-HEMTs have been studied by adding a high quality single dielectric layer, such as Si 3 N 4 , Al 2 O 3 , SiO 2 , HfO 2 , Sc 2 O 3 , GaO 3 , or ZrO 2 , to suppress current collapse, improve current flow, and reduce gate leakage current [14][15][16][17]19,20].…”

Section: Introductionmentioning

confidence: 99%

“…Gate leakage current in GaN-based HEMTs can be reduced using structures similar to metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), where high-k materials, such as Si 3 N 4 and Al 2 O 3 , are deposited under the gate metal [11][12][13][14][15][16][17][18]. MIS-HEMTs have been studied by adding a high quality single dielectric layer, such as Si 3 N 4 , Al 2 O 3 , SiO 2 , HfO 2 , Sc 2 O 3 , GaO 3 , or ZrO 2 , to suppress current collapse, improve current flow, and reduce gate leakage current [14][15][16][17]19,20]. However, various dielectric layers deposited on top of a GaN-based HEMT cause an interface state trap and mechanical stresses, resulting in changes in threshold voltage and carrier concentration, respectively.…”

Section: Introductionmentioning

confidence: 99%

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

et al. 2019

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This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.

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Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC

Cited by 25 publications

References 50 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Wide and ultra-wide bandgap oxides: where paradigm-shift photovoltaics meets transparent power electronics

Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

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